TSM10N06CPRO datasheet(2/6 Pages) TSC

2 / 6 page

TSM10N06

60V N-Channel MOSFET

2/6

Version: A10

Electrical Specifications (Ta = 25

oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

BVDSS

Gate Threshold Voltage

VDS = VGS, ID = 250µA

VGS(TH)

Gate Body Leakage

VGS = ±20V, VDS = 0V

IGSS

±100

Zero Gate Voltage Drain Current

VDS = 60V, VGS = 0V

IDSS

µA

Drain-Source On-State Resistance

VGS = 10V, ID = 10A

RDS(ON)

VGS = 5V, ID = 10A

VGS = 4V, ID = 9A

110

Forward Transconductance

VDS = 25V, ID = 6A

gfs

Diode Forward Voltage

IS = 2A, VGS = 0V

VSD

0.9

1.2

Dynamic

Total Gate Charge

VDS = 30V, ID = 9A,

VGS = 4.5V

10.5

Gate-Source Charge

Qgs

3.5

Gate-Drain Charge

Qgd

4.2

Input Capacitance

VDS = 30V, VGS = 0V,

f = 1.0MHz

Ciss

1100

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Switching

2,3

Turn-On Delay Time

VDD = 30V, RL = 5.4 ,

ID = 9A, VGEN = 10V,

RG = 1

td(on)

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Notes 1: Pulse test: PW ≤300µS, duty cycle ≤2%

Notes 2: For DESIGN AID ONLY, not subject to production testing.

Notes 3: Switching time is essentially independent of operating temperature.

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