2SA2012 datasheet(2/5 Pages) ONSEMI

2 / 5 page

2SA2012

No.6306-2/5

Continued from preceding page.

Parameter

Symbol

Conditions

Ratings

Unit

Base Current

--600

Collector Dissipation

When mounted on ceramic substrate (250mm2×0.8mm)

1.3

Tc=25°C

3.5

Junction Temperature

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB=--30V, IE=0A

--0.1

μA

Emitter Cutoff Current

IEBO

VEB=--4V, IC=0A

--0.1

μA

DC Current Gain

hFE

VCE=--2V, IC=--500mA

200

560

Gain-Bandwidth Product

VCE=--10V, IC=--500mA

350

MHz

Output Capacitance

Cob

VCB=(--)10V, f=1MHz

Collector to Emitter Saturation Voltage

VCE(sat)1

IC=--1.5A, IB=--30mA

--140

--210

VCE(sat)2

IC=--2.5A, IB=--125mA

--170

--260

Base to Emitter Saturation Voltage

VBE(sat)

IC=--1.5A, IB=--30mA

--0.83

--1.2

Collector to Base Breakdown Voltage

V(BR)CBO

IC=--10μA, IE=0A

--30

Collector to Emitter Breakdown Voltage

V(BR)CEO

IC=--1mA, RBE=∞

--30

Emitter to Base Breakdown Voltage

V(BR)EBO

IE=--10μA, IC=0A

--5

Turn-ON Time

ton

See speciﬁed Test Circuit.

Storage Time

tstg

270

Fall Time

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

2SA2012-TD-E

PCP

1,000pcs./reel

Pb Free

INPUT

OUTPUT

VCC= --12V

100

μF

470

μF

VBE=5V

PW=20

μs

IB1

IB2

D.C.

≤1%

IC=20IB1= --20IB2= --500mA

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