T89C51RD2-3CWC-L datasheet(50/86 Pages) ATMEL

50 / 86 page

Rev. F - 15 February, 2001

T89C51RD2

8. FLASH EEprom Memory

8.1. General description

The FLASH memory increases EPROM and ROM functionality with in-circuit electrical erasure and programming.

It contains 64K bytes of program memory organized in 512 pages of 128 bytes. This memory is both parallel and

serial In-System Programmable (ISP). ISP allows devices to alter their own program memory in the actual end

product under software control. A default serial loader (bootloader) program allows ISP of the FLASH.

The programming does not require 12v external programming voltage. The necessary high programming voltage

is generated on-chip using the standard VCC pins of the microcontroller.

8.2. Features

• FLASH E2PROM internal program memory.

• The last 1K bytes of the FLASH is used to store the low-level in-system programming routines and a default

serial loader. If the application does not need to use the ISP and does not expect to modify the FLASH content,

the Boot FLASH sector can be erased to provide access to the full 64K byte FLASH memory.

• Boot vector allows user provided FLASH loader code to reside anywhere in the FLASH memory space. This

configuration provides flexibility to the user.

• Default loader in Boot FLASH allows programming via the serial port without the need of a user provided loader.

• Up to 64K byte external program memory if the internal program memory is disabled (EA = 0).

• Programming and erase voltage with standard 5V or 3V V

CC supply.

• Read/Programming/Erase:

• Byte-wise read (without wait state).

• Byte or page erase and programming (10 ms).

• Typical programming time (63K bytes) in 20 s.

• Parallel programming with 87C51 compatible hardware interface to programmer.

• Programmable security for the code in the FLASH.

• 100k write cycles

• 10 years data retention

8.3. FLASH Programming and Erasure

The 64K bytes FLASH is programmed by bytes or by pages of 128 bytes. It is not necessary to erase a byte or

a page before programming. The programming of a byte or a page includes a self erase before programming.

There are three methods to program the FLASH memory:

• First, the on-chip ISP bootloader may be invoked which will use low level routines to program the pages. The

interface used for serial downloading of FLASH is the UART.

• Second, the FLASH may be programmed or erased in the end-user application by calling low-level routines

through a common entry point in the Boot loader.

• Third, the FLASH may be programmed using the parallel method by using a conventional EPROM programmer.

The parallel programming method used by these devices is similar to that used by EPROM 87C51 but it is not

identical and the commercially available programmers need to have support for the T89C51RD2.

T89C51RD2-3CWC-L 数据表(PDF) 50 Page - ATMEL Corporation

T89C51RD2-3CWC-L 数据表(HTML) 50 Page - ATMEL Corporation

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86

数据表下载