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ISO150 数据表(PDF) 7 Page - Burr-Brown (TI) |
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ISO150 数据表(HTML) 7 Page - Burr-Brown (TI) |
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7 / 9 page ![]() ® 7 ISO150 LOGIC LEVELS A single pin serves as a data input or output, depending on the mode selected. Logic inputs are CMOS with thresholds set for TTL compatibility. The logic threshold is approxi- mately 1.3V with 5V supplies and with approximately 400mV of hysteresis. Input logic thresholds vary with the power supply voltage. Drive the logic inputs with signals that swing the full logic voltage swing. The ISO150 will use somewhat greater quiescent current if logic inputs do not swing within 0.5V of the power supply rails. In receive mode, the data output can drive 15 standard LS-TTL loads. It will also drive CMOS loads. The output drive circuits are CMOS. POWER SUPPLY Separate, isolated power supplies must be connected to side A and side B to provide galvanic isolation. Nominal rated supply voltage is 5V. Operation extends from 3V to 5.5V. Power supplies should be bypassed close to the device pins on both sides of the isolation barrier. The VS pin for each side powers the transceivers for both channel 1 and 2. The specified supply current is the total of both transceivers on one side, both operating in the indicated mode. Supply current for one transceiver in transmit mode and one in receive mode can be estimated by averaging the specifications for transmit and receive operation. Supply current varies with the data transmission rate—see typical curves. POWER-UP STATE The ISO150 transmits information across the barrier only when the input-side data changes logic state. When a trans- ceiver is first programmed for receive mode, or is powered- up in receive mode, its output is initialized “high”. Subse- quent changes of data applied to the input side will cause the output to properly reflect the input side data. SIGNAL LOSS The ISO150’s differential-mode signal transmission and careful receiver design make it highly immune to voltage across the isolation barrier (isolation-mode voltage). Rapidly changing isolation-mode voltage can cause data errors. As the rate of change of isolation voltage is increased, there is a very sudden increase in data errors. Approximately 50% of ISO150s will begin to produce data errors with isolation- mode transients of 1.6kV/ µs. This may occur as low as 500V/ µs in some devices. In comparison, a 1000Vrms, 60Hz isolation-mode voltage has a rate of change of approximately 0.5V/ µs. Still, some applications with large, noisy isolation-mode voltage can produce data errors by causing the receiver output to change states. After a data error, subsequent changes in input data will produce correct output data. PROPAGATION DELAY AND SKEW Logic transitions are delayed approximately 27ns through the ISO150. Some applications are sensitive to data skew— the difference in propagation delay between channel 1 and channel 2. Skew is less than 2ns between channel 1 and channel 2. Applications using more than one ISO150 must allow for somewhat greater skew from device to device. Since all devices are tested for delay times of 20ns min to 40ns max, 20ns is the largest device-to-device data skew. MODE CHANGES The transmission direction of a channel can be changed “on the fly” by reversing the logic levels at the channel’s R/T pins on both side A and side B. Approximately 75ns after the transceiver is programmed to receive mode its output is initialized “high”, and will respond to subsequent input-side changes in data. STANDBY MODE Quiescent current of each transceiver circuit is very low in transmit mode when input data is not changing (1nA typi- cal). To conserve power when data transmission is not required, program both side A and B transceivers for trans- mit mode. Input data applied to either transceiver is ignored by the other side. High speed data applied to either trans- ceiver will increase quiescent current. CIRCUIT LAYOUT The high speed of the ISO150 and its isolation barrier require careful circuit layout. Use good high speed logic layout techniques for the input and output data lines. Power supplies should be bypassed close to the device pins on both sides of the isolation barrier. Use low inductance connec- tions. Ground planes are recommended. Maintain spacing between side 1 and side 2 circuitry equal or greater than the spacing between the missing pins of the ISO150 (approximately 16mm for the DIP version). Sockets are not recommended. |
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