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HSC106DM 数据表(PDF) 2 Page - SemiHow Co.,Ltd.

部件名 HSC106DM
功能描述  Sensitive Gate Silicon Controlled Rectifier
PDF  4 Pages
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制造商  SEMIHOW [SemiHow Co.,Ltd.]
网页  http://www.semihow.com
标志 SEMIHOW - SemiHow Co.,Ltd.

HSC106DM 数据表(HTML) 2 Page - SemiHow Co.,Ltd.

  HSC106DM Datasheet HTML 1Page - SemiHow Co.,Ltd. HSC106DM Datasheet HTML 2Page - SemiHow Co.,Ltd. HSC106DM Datasheet HTML 3Page - SemiHow Co.,Ltd. HSC106DM Datasheet HTML 4Page - SemiHow Co.,Ltd.  
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◎ SEMIHOW REV.A2 JUN 2007
V
2.2
IFM=1A
Peak Forward On-State
Voltage
(2)
VTM
mA
5.0
0.2
0.35
VAK= 12VDC, IG= 20mA,
Gate Open,
TJ= 25℃
TJ= 110℃
Latching Current
IL
(2) Pulse Test : Pulse width ≤ 2.0mS, Duty Cycle ≤ 2%
(1) R
GK Current is not included in measurement
V/uS
8.0
VAK = VDRM, Exponential waveform,
RGK= 1㏀, Gate open,
TJ=110℃
Critical Rate of Rise
Off state Voltage
dv/dt
uA
uA
10
100
VAK= VDRM or VRRM,
TC= 25℃
TC= 110℃
Repetitive or Reverse
Peak Blocking Current
IDRM
IRRM
mA
3.0
6.0
2.0
0.19
0.33
0.07
VAK= 12VDC, Gate open,
Initiating current=20mA, TJ= 25℃
TJ= -40℃
TJ = 110℃
Holding Current
IH
V
0.2
VAK= 12VDC, RL= 100Ω, TC= 110℃
Non Trigger Gate Voltage
VGD
V
0.8
1.0
0.6
0.75
0.4
0.5
VAK= 6VDC, RL= 100Ω, TJ= 25℃
VAK= 6VDC, RL= 100Ω, TJ= -40℃
Gate Trigger Voltage
(1)
VGT
uA
200
500
15
35
VAK= 6VDC, RL= 100Ω, TJ= 25℃
VAK= 6VDC, RL= 100Ω, TJ= -40℃
Gate Trigger Current
(1)
IGT
Units
Max
Typ
Min
Test Conditions
Parameter
Symbol
Electrical Characteristics (Ta=25℃)
℃/W
3.0
Junction to Case
Thermal Resistance
RTH(J-C)
℃
260
Maximum Lead Temperature for Soldering Purpose 1/8
”, from case
for 10second
TL
℃/W
75
Junction to Ambient
Thermal Resistance
RTH(J-A)
Units
Max
Typ
Min
Conditions
Parameter
Symbol
Thermal Characteristics



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