| 数据搜索系统,热门电子元器件搜索 |
|
HTD2A80AS 数据表(PDF) 1 Page - SemiHow Co.,Ltd. |
|
|
|||||||||||||||||||||||||||||
HTD2A80AS 数据表(HTML) 1 Page - SemiHow Co.,Ltd. |
|
1 / 4 page ![]() HTD2A80AS 3 Quadrants 2A TRIAC V DRM = 1000 V I T(RMS) = 2 A I TSM = 17 A I GT = 10mA Absolute Maximum Ratings (T J=25 unless otherwise specified ) Symbol Parameter Conditions Ratings Unit V DRM Repetitive Peak Off-State Voltage Sine wave, 50/60Hz, Gate open 1000 V V RRM Repetitive Peak Reverse Voltage 1000 V V DSM Non-Repetitive Surge Peak Off-State Voltage 1100 V V RSM Non-Repetitive Peak Reverse Voltage 1100 V I T(RMS) R.M.S. On-State Current Full sine wave, T C = 95 oC2 A I TSM Non-Repetitive Surge Peak On-State Current Full sine wave, 50Hz/60Hz 16/17 A I2t Fusing Current t = 10ms 1.28 A2S P GM Forward Peak Gate Power Dissipation T J = 80 C 1W P G(AV) Forward Average Gate Power Dissipation T J = 80 C 0.2 W I GM Peak Gate Current tp 2us, T J = 80 C 1A T J Operating Junction Temperature -40~+125 oC T STG Storage Temperature -40~+150 oC FEATURES Repetitive Peak Off-State Voltage : 1000V R.M.S On–State Current (I T(RMS) = 2A) Gate Trigger Current : 10mA dV/dt 500V/us High Voltage Blocking Capability General Description Intended for use in AC static switching and industrial control systems, driving low power highly inductive load like solenoid, pump, fan ad micro-motor. D-PAK 1.T1 2. T2 3. G 2 1 3 Symbol |
类似零件编号 - HTD2A80AS |
|
类似说明 - HTD2A80AS |
|
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |