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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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HTD4-600 数据表(PDF) 2 Page - SemiHow Co.,Ltd. |
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HTD4-600 数据表(HTML) 2 Page - SemiHow Co.,Ltd. |
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2 / 6 page  Electrical Characteristics (T =25℃) Electrical Characteristics (Ta=25℃) Symbol Parameter Test Conditions Min Typ Max Units IGT Gate Trigger Current VD=6V, RL=10Ω 1+, 1-, 3- 5 mA 3+ 10 mA VGT Gate Trigger Voltage VD=6V, RL=10Ω 1+, 1-, 3- 1.4 V 3+ 1.8 V VGD Non Trigger Gate Voltage TJ=125℃, VD=1/2VDRM 0.2 V C iti l R t f Ri f Off St t T 125℃ V 2/3V (dv/dt)c Critical Rate of Rise of Off-State Voltage at Communication TJ=125℃, VD=2/3VDRM (di/dt)c=-0.5A/ms 5.0 V/uS IH Holding Current 10 mA IDRM Repetitive Peak Off-State Current VD=VDRM, Single Phase, Half Wave, TJ=125℃ 1.0 mA VTM Peak On-State Voltage IT=6A, Inst, Measurement 1.7 V Thermal Characteristics Symbol Parameter Test Conditions Min Typ Max Units RθJC Thermal Resistance Junction to Case 3.0 ℃ /W ◎ SEMIHOW REV.A0,Jan 2010 |
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