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HTP8A60H 数据表(PDF) 2 Page - SemiHow Co.,Ltd. |
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HTP8A60H 数据表(HTML) 2 Page - SemiHow Co.,Ltd. |
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2 / 6 page ![]() ◎ SEMIHOW REV.A1,March 2013 Electrical Characteristics (T J=25℃ unless otherwise specified ) Thermal Characteristics Symbol Parameter Conditions Min Typ Max Unit RθJC Thermal Resistance Junction to Case 3.7 o C/W RθJA Thermal Resistance Junction to Ambient 58 o C/W Notes : 1. Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1% Symbol Parameter Conditions Min Typ Max Unit I DRM Repetitive Peak Off-State Current V D = VDRM T J=25 oC - - 50 uA T J=125 oC - - 5 mA I RRM Repetitive Peak Reverse Current V D = VDRM T J=25 oC - - 50 uA T J=125 oC - - 5 mA I GT Gate Trigger Current V D = 12V, RL=330Ω 1+, 1-, 3- - - 35 mA V GT Gate Trigger Voltage V D = 12V, RL=330Ω 1+, 1-, 3- - - 1.5 V V GD Non-Trigger Gate Voltage1 V D = 12V, RL=330Ω, TJ=125 oC 0.2 - - V V TM Peak On-State Voltage I T = 11A, IG = 20mA - 1.2 1.5 V dv/dt Critical Rate of Rise of Off-State Voltage V D = 2/3 VDRM, TJ=125 oC 200 - - V/us I H Holding current I T= 0.2A - 30 - mA |
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