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CMPWR150TO 数据表(PDF) 2 Page - California Micro Devices Corp |
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CMPWR150TO 数据表(HTML) 2 Page - California Micro Devices Corp |
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2 / 8 page ![]() ©1999 California Micro Devices Corp. All rights reserved. 9/99 215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com 2 CMPWR150 CALIFORNIA MICRO DEVICES Note 1: The SOIC package used is thermally enhanced through the use of a fused integral leadframe. The power rating is based on a printed circuit board heat spreading capability equivalent to 2 square inches of copper connected to the GND pins. Typical multi-layer boards using power plane construction will provide this heat spreading ability without the need for additional dedicated copper area. (Please consult with factory for thermal evaluation assistance.) Note 2: The hysteresis defines the maximum level of acceptable disturbance on V CC during switching. It is recommended that the VCC source impedance be kept below 0.25 Ω to ensure the switching disturbance remains below the hysteresis during select/deselect transitions. An input capacitor may be required to help minimize the switching transient. Note 3: Ground pin current consists of controller current (0.15mA) and regulator current if enabled. The controller always draws 0.15mA from either V CC or VOUT , whichever is greater. All regulator current is supplied exclusively from VCC . At high load currents a small increase occurs due to current limit protection circuitry. S C I T S I R E T C A R A H C G N I T A R E P O L A C I R T C E L E ) e s i w r e h t o d e i f i c e p s s s e l n u s n o i t i d n o c g n i t a r e p o r e v o ( l o b m y Sr e t e m a r a Ps n o it i d n o CN I MP Y TX A MT I N U V T U O e g a tl o V t u p t u O r o t a l u g e RI > A m 0 0 5 D A O L A m 0 >5 3 1 . 30 3 . 35 6 4 . 3V I T U O t n e r r u C t u p t u O r o t a l u g e R 0 0 50 0 8A m V L E S C C e g a tl o V t c e l e Sd e l b a n E r o t a l u g e R5 3 . 45 4 . 4 V S E D C C e g a tl o V t c e l e s e Dd e l b a s i D r o t a l u g e R0 9 . 30 1 . 4V V T S Y H C C e g a tl o V s is e r e t s y Hs is e r e t s y H 2 e t o N 5 2 . 0 I C/ S t n e r r u C t u p t u O ti u c ri C t r o h SV C C V , V 5 = T U O V 0 =0 0 2 1A m I C C R V C C e g a k a e L e s r e v e R n i PV T U O V , V 3 . 3 = C C V 0 =5 0 5 mA V D A O L R n o it a l u g e R d a o LV C C I , V 5 = D A O L A m 0 0 5 o t A m 0 5 =5 7V m V E N I L R n o it a l u g e R e n i LV C C I , V 5 . 5 o t V 5 . 4 = D A O L A m 5 =2 V m I C C t n e r r u c y l p p u S t n e c s e i u QV C C V > , L E S C C I D A O L A m 0 =0 . 10 . 3 V S E D C C V > C C V > T U O 5 1 . 05 2 . 0A m V T U O V > C C 1 0 . 02 0 . 0 I D N G t n e r r u C n i P d n u o r G 3 e t o N d e l b a s i D r o t a l u g e R5 1 . 00 3 . 0 V C C I , V 5 = D A O L A m 5 =0 . 15 . 2A m V C C I , V 5 = D A O L A m 0 0 5 =2 . 10 . 3 R H O e c n a t s is e R p u -l l u P e v ir DR P U L L U P V o t C C V , C C V > L E S C C 0 0 10 0 4 W R L O e c n a t s is e R n w o d -l l u P e v ir DR N W O D L L U P V , D N G o t S E D C C V > C C 0 0 20 0 4 t H D y a l e D h g i H e v ir DC E V I R D V ,F n 1 = C C t E S I R s n 0 0 1 <0 . 1 ms t L D y a l e D w o L e v ir DC E V I R D V ,F n 1 = C C t L L A F s n 0 0 1 <2 . 0 S G N I T A R M U M I X A M E T U L O S B A r e t e m a r a Pg n it a Rti n U ) M B H ( n o it c e t o r P D S E0 0 0 2V V C C e g a tl o V t u p n I5 . 0 - d n G , 0 . 6 +V e g a tl o V c i g o L e v ir DV C C 5 . 0 - d n G , 5 . 0 +V e g n a R e r u t a r e p m e T e g a r o t S0 5 1 + o t 0 4 - oC t n e i b m A g n it a r e p O0 7 + o t 0 n o it c n u J g n it a r e p O5 2 1 + o t 0 3 6 2 - O T : n o it a p is si D r e w o P C I O S 1 e t o N 0 . 1W S N O I T I D N O C G N I T A R E P O r e t e m a r a Pe g n a Rti n U V C C 5 . 0 ± 0 . 5V )t n e i b m A ( e r u t a r e p m e T0 7 + o t 0 oC t n e r r u C d a o L0 0 5 o t 0A m C T X E % 0 1 ± 0 1 mF |
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