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CMPWR280 数据表(PDF) 2 Page - California Micro Devices Corp |
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CMPWR280 数据表(HTML) 2 Page - California Micro Devices Corp |
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2 / 10 page ![]() CALIFORNIA MICRO DEVICES ©2000 California Micro Devices Corp. All rights reserved. 3/00 215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com CMPWR280 2 Note 1: The maximum power dissipation of this device is internally limited by thermal shutdown circuitry. To achieve a power dissipation of 3.0 watts, a case-to-ambient thermal resistance of 25°C/W must be provided. This will typically require dedicated heatsinking ability of the printed circuit board. For more details, please see the Typical Thermal Characteristics section. Note 2: The hysteresis defines the maximum level of acceptable disturbance on V CC during switching. It is recommended that the VCC source impedance be kept below 0.15 Ω to ensure the switching disturbance remains below the hysteresis during select/deselect transitions. Note 3: Ground pin current consists of controller current (0.2mA) and regulator current when selected S G N I T A R M U M I X A M E T U L O S B A r e t e m a r a Pg n i t a Rt i n U ) M B H ( n o it c e t o r P D S E0 0 0 2V V C C ,V Y B S V , T U O 5 . 0 - d n G , 0 . 6 +V e g a tl o V c i g o L e v ir DV C C (V Y B S 5 . 0 - D N G , 5 . 0 + )V e g n a R e r u t a r e p m e T e g a r o t S0 5 1 + o t 0 4 - t n e i b m A g n it a r e p O0 7 + o t 0 oC n o it c n u J g n it a r e p O0 5 1 + o t 0 ) 3 6 2 - O T ( : n o it a p is si D r e w o P 1 e t o N d e ti m i L y ll a n r e t n IW S N O I T I D N O C G N I T A R E P O r e t e m a r a Pe g n a Rt i n U V ,C C V Y B S 5 2 . 0 ± 0 . 5V )t n e i b m A ( e r u t a r e p m e T0 7 + o t 0 oC t n e rr u C d a o L0 0 5 1 o t 0A m C TX E % 0 1 ± 0 1 µF S C I T S I R E T C A R A H C G N I T A R E P O L A C I R T C E L E ) e s i w r e h t o d e i f i c e p s s s e l n u s n o i t i d n o c g n i t a r e p o r e v o ( l o b m y Sr e t e m a r a Ps n o i t i d n o CN I MP Y TX A MT I N U V T U O e g a tl o V t u p t u O r o t a l u g e RI < A m 0 D A O L V ( A m 0 0 5 1 < C C )5 3 1 . 30 3 . 35 6 4 . 3V I < A m 0 D A O L V ( A m 5 7 3 < Y B S ) V L E S C C e g a tl o V t c e l e SV C C d e l b a n E r o t a l u g e R0 5 . 40 7 . 4 V S E D C C V C C e g a tl o V t c e l e s e DV C C d e l b a s i D r o t a l u g e R0 9 . 30 1 . 4V V T S Y H C C e g a tl o V s i s e r e t s y HV C C : s i s e r e t s y H 2 e t o N 0 4 . 0 I T U O t n e r r u C t u p t u O m u m i x a MV C C d e t c e l e s0 0 5 10 0 5 2A m V Y B S d e t c e l e s5 7 30 5 7 I C/ S t n e r r u C t u p t u O ti u c ri C t r o h SV C C d e t c e l e s0 0 8A m V Y B S d e t c e l e s0 0 2 I C C R V C C e g a k a e L e s r e v e R n i PV C C V . V 0 = Y B S V 5 =0 10 0 1 µA I YB S R V YB S e g a k a e L e s r e v e R n i PV Y B S 0 = . V V C C V 5 =0 10 1 V D A O L R V C C n o it a l u g e R d a o LV C C I , d e t c e l e s D A O L A m 0 0 5 1 o t A m 5 1 =0 3V m V YB S n o it a l u g e R d a o LV Y B S I , d e t c e l e s D A O L A m 5 7 3 o t A m 5 =0 3 V E N IL R n o it a l u g e R e n i LV C C I , V 5 . 5 o t V 5 . 4 = D A O L A m 5 =5 V m I C C V C C t n e rr u C y l p p u SV C C I , d e t c e l e s T U O A m 0 =5 . 10 . 3A m V S E D C C V > C C V > X U A V r o T U O 1 . 02 . 0 I YB S V YB S t n e rr u C y l p p u SV YB S I , d e t c e l e s T U O A m 0 =5 . 10 . 3A m I D N G :t n e rr u C d n u o r G 3 e t o N V y l n o ( d e l b a si D r o t a l u g e R T U O )t n e s e r p2 . 03 . 0 , d e t c e l e s r o t a l u g e RI D A O L A m 5 =5 . 10 . 3A m d e t c e l e s r o t a l u g e R, V 5 =I D A O L A m 0 0 5 =8 . 15 . 3 R H O R e v ir D S D h g i HR S D V o t C C V , C C V > L E S C C 50 1kΩ R H O R e v ir D S D w o LR S D V , D N G o t S E D C C V > C C 5 . 01 t H D y a l e D h g i H e v ir DC E V I R D V ,F n 1 = C C t E S I R s n 0 0 1 <0 . 5 µs t L D y a l e D w o L e v ir DC E V I R D V ,F n 1 = C C t L L A F s n 0 0 1 <5 . 0 T E L B A S I D e r u t a r e p m e t n w o d t u h S 5 6 1 °C T TS Y H si s e r e t s y h l a m r e h T 0 3 |
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