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CMV1010YR 数据表(PDF) 8 Page - California Micro Devices Corp |
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CMV1010YR 数据表(HTML) 8 Page - California Micro Devices Corp |
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8 / 10 page ![]() ©2000 California Micro Devices Corp. All rights reserved. 5/00 215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com 8 CALIFORNIA MICRO DEVICES CMV1010 Applications Information 1. Input Common Mode Range and Output Voltage Considerations The CMV1010 is capable of accommodating an input common mode voltage equal to one volt below the positive rail and all the way to the negative rail. It is also capable of output voltages equal to both power supply rails. Voltages that exceed the supply voltages will not cause phase inversion of the output, however, ESD diode clamps are provided at the inputs that can be damaged if static currents in excess of ±5mA are allowed to flow in them. This can occur when the magnitude of input voltage exceeds the rail by more than 0.3 volt. To preclude damage, an applications resistor, R S, in series with the input is recommended as illustrated in Figure 1 whose value for R S is given by: VIN – (V+ +0.3V) R S > ————————— 5mA For V+ (or V–) equal to 2.2 volts and V IN equal to 10 volts, R S should be chosen for a value of 2.5KΩ or greater. Figure 1. 2. Output Current and Power Dissipation Considerations The CMV1010 is capable of sinking and sourcing output currents in excess of 7mA at voltages very nearly equal to the rails. As such, it does not have any internal short circuit protection (which would in any event detract from its rail to rail capability). Although the power dissipation and junction temperature rise are small, a short analysis is worth investigating. Obviously, the worst case from a power dissipation point of view is when the output is shorted to either ground in a single rail application or to the opposite supply voltage in split rail applications. Since device only draws 60 µA supply current (100µA maximum), its contribution to the junction temperature, T J, is negli- gible. As an example, let us analyze a situation in which the CMV1010 is operated from a 5 volt supply and ground, the output is “programmed” to positive saturation, and the output pin is indefinitely shorted to ground. In general: P DISS = (V+ – VOUT)*IOUT + IS*V+ Where: P DISS = Power dissipated by the chip V+ = Supply voltage V OUT = The output voltage I S = Supply Current The contribution to power dissipation due to supply current is 200 µW and is indeed negligible as stated above. The primary contribution to power dissipation occurs in the output stage. V+ – V OUT would equal 5V – 0V = 5 V, and power dissipation would be equal to 35 µW. T J = TA + θJA* PDISS Where: T A = The ambient temperature θ JA = The thermal impedance of the package junction to ambient The SOT23 exhibits a θ JA equal to 325°C/W. Thus for our example the junction rise would be about 11.4 which is clearly not a destructive situation even under an ambient temperature of 85°C. 3. Input Impedance Considerations The CMV1010 exhibits an input impedance typically in excess of 1 Tera Ω (1 X 1012ohms) making it very appropriate for applications involving high source impedance such as photodiodes and high output impedance transducers or long time constant integra- tors. High source impedances usually dictate large feedback resistors. But, the output capacitance of the source in parallel with the input capacitance of the CMV1010 (which is typically 3pF) create a parasitic pole with the feedback resistor which erodes the phase margin of the amplifier. The usual fix is to bypass, R F, as shown in Figure 2 with a small capaci- tor to cancel the input pole. The usual formula for calculating C F always results in a value larger than that is required: 1 1 —————— ± —————— 2 Π R S CS 2 Π R F CF Since the parasitic capacitance can change between the breadboard and the production printed circuit board, we favor the use of a "gimmick", a technique |
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