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EL357NETA-VG 数据表(PDF) 3 Page - Everlight Electronics Co., Ltd

部件名 EL357NETA-VG
功能描述  4 PIN SOP PHOTOTRANSISTOR PHOTOCOUPLER
PDF  11 Pages
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制造商  EVERLIGHT [Everlight Electronics Co., Ltd]
网页  http://www.everlight.com
标志 EVERLIGHT - Everlight Electronics Co., Ltd

EL357NETA-VG 数据表(HTML) 3 Page - Everlight Electronics Co., Ltd

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DATASHEET
4 PIN SOP PHOTOTRANSISTOR PHOTOCOUPLER
EL357N-G series
3
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 13, 2013. Issue No:DPC-0000014 Rev.5
www.everlight.com
Electro-Optical Characteristics (Ta=25℃
℃
℃
℃ unless specified otherwise)
Input
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Forward voltage
VF
-
1.2
1.4
V
IF = 20mA
Reverse current
IR
-
-
10
µA
VR = 4V
Input capacitance
Cin
-
30
250
pF
V = 0, f = 1kHz
Output
Parameter
Symbol
Min
Typ.
Max.
Unit
Condition
Collector-Emitter dark
current
ICEO
-
-
100
nA
VCE = 20V, IF = 0mA
Collector-Emitter
breakdown voltage
BVCEO
80
-
-
V
IC = 0.1mA
Emitter-Collector
breakdown voltage
BVECO
7
-
-
V
IE = 0.01mA
Transfer Characteristics (Ta=25°C unless specified otherwise)
Parameter
Symbol
Min
Typ.
Max.
Unit
Condition
Current
Transfer
ratio
EL357N
CTR
50
-
600
%
IF = 5mA ,VCE = 5V
EL357NA
80
-
160
EL357NB
130
-
260
EL357NC
200
-
400
EL357ND
300
-
600
EL357NE
100
-
200
EL357NF
150
-
300
Collector-Emitter
saturation voltage
VCE(sat)
-
0.1
0.2
V
IF = 20mA ,IC = 1mA
Isolation resistance
RIO
5×10
10
-
-
Ω
VIO = 500Vdc,
40~60% R.H.
Floating capacitance
CIO
-
0.6
1.0
pF
VIO = 0, f = 1MHz
Rise time
tr
-
3
18
µs
VCE = 2V, IC = 2mA,
RL = 100Ω
Fall time
tf
-
4
18
* Typical values at Ta = 25°C



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