IXTA36P15P IXTP36P15P

IXTQ36P15P IXTH36P15P

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

Note 1

11

19

S

C

iss

3100

pF

C

oss

V

610

pF

C

rss

100

pF

t

d(on)

21

ns

t

r

31

ns

t

d(off)

36

ns

t

f

15

ns

Q

g(on)

55

nC

Q

gs

V

20

nC

Q

gd

18

nC

R

thJC

0.42

°C/W

R

thCS

(TO-3P, TO-247)

0.21

°C/W

(TO-220)

0.50

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

- 36

A

I

SM

Repetitive, Pulse Width Limited by T

JM

-140

A

V

SD

I

- 3.3

V

t

rr

228

ns

Q

RM

2.0

μC

I

RM

-17.6

A

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note

1: Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

Resistive Switching Times

V

R

I

V