CALIFORNIA MICRO DEVICES

PACDN005

©2000 California Micro Devices Corp. All rights reserved.

215 Topaz Street, Milpitas, California 95035

Tel: (408) 263-3214

Fax: (408) 263-7846

www.calmicro.com

2

2/00

STANDARD SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Rating

Supply Voltage

-0.3V to +7V

Channel clamp current (continuous)

±50mA

Operating Temperature

Storage Temperature

Tstg

Package Power Rating

1.00W, max.

Parameter

Conditions

Min

Typ

Max

Diode foward voltage

0.55V

0.70V

0.55V

0.70V

0.90V

From GND

0.50V

0.65V

0.50V

0.65V

0.85V

<400pS

Channel leakage

0.1µA

5µA

Input Capacitance

5pF

ESD Protection

MIL-STD-883, Method 3015

4KV

The absolute maximum ratings are limiting values, to be applied individually, beyond which the device may be permanently damaged. Functional

operation under any of these conditions is not guaranteed. Exposing the device to its absolute maximum rating may

affect its reliability.

Package

Ordering Part Number

Pins

Style

Tubes

Tape & Reel

Part Marking

24

QSOP

PACDN005Q/T

PACDN005Q/R

PACDN005Q

24

SOIC Wide

PACDN005S/T

PACDN005S/R

PACDN005S

STANDARD PART ORDERING INFORMATION

Note 1:

The test circuit depicts the Schottky diodes in their typical application. The impact of a reverse recovery time is measured

using a narrow pulse with 670- pS rise and fall times. This pulse propagates down a 60 cm, 54 ohm strip line fabricated on

a multi-layer, controlled impedance printed circuit board. In testing the ground clamp diode, the negative going edge of the

pulse causes a reflection which forces the diode under test to become forward biased. The positive going edge of the pulse

attempts to pull this diode out of forward conduction. A reverse recovery phenomenon would cause a delay between the

known arrival time of the positive edge and the observed edge due to the time it takes for the forward biased diode to actually

become reversed biased. In this measurement, however, there is no observable difference and therefore no delay for the

See test circuit.

Test Circuit. Line length, pulse width and duty cycle are selected such as that only one reflection is involved

in the measurement.

V

Diode

under

test

DD

Z, L

0

ABT16244A

Pulse

Generator