DMN65D8L

Document number: DS35923 Rev. 2 - 2

3 of 6

www.diodes.com

August 2012

© Diodes Incorporated

DMN65D8L

0

0.1

0.2

0.3

0.4

0.5

0.6

01

2

3

4

5

V

, DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

DS

0.01

0.1

1

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

V

, GATE-SOURCE VOLTAGE

GS

Figure 2. Typical Transfer Characteristics

V

= 5.0V

DS

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0

0.1

0.2

0.3

0.4

0.5

0.6

I , DRAIN CURRENT

D

Figure 3. Typical On-Resistance vs.

Drain Current and Temperature

V= 5V

GS

V

= 10V

GS

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Figure 4. On-Resistance Variation with Temperature

J

°

V= 5V

I = 115mA

GS

D

V=

V

I = 115mA

GS

D

10

0

1

2

3

4

5

- 50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Figure 5. On-Resistance Variation with Temperature

J

°

V= 5V

I= 115mA

GS

D

V=

V

I= 115mA

GS

D

10

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Figure 6. Gate Threshold Variation vs. Ambient Temperature

J

°

I= 1mA

D

I = 250µA

D