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IRGP4262DPBF 数据表(PDF) 4 Page - International Rectifier

部件名 IRGP4262DPBF
功能描述  Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
PDF  12 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRGP4262DPBF 数据表(HTML) 4 Page - International Rectifier

  IRGP4262DPBF Datasheet HTML 1Page - International Rectifier IRGP4262DPBF Datasheet HTML 2Page - International Rectifier IRGP4262DPBF Datasheet HTML 3Page - International Rectifier IRGP4262DPBF Datasheet HTML 4Page - International Rectifier IRGP4262DPBF Datasheet HTML 5Page - International Rectifier IRGP4262DPBF Datasheet HTML 6Page - International Rectifier IRGP4262DPBF Datasheet HTML 7Page - International Rectifier IRGP4262DPBF Datasheet HTML 8Page - International Rectifier IRGP4262DPBF Datasheet HTML 9Page - International Rectifier Next Button
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IRGP4262DPbF/IRGP4262D-EPbF
4
www.irf.com
© 2013 International Rectifier
June 12, 2013
510
15
20
VGE (V)
0
2
4
6
8
10
12
ICE= 12A
ICE= 24A
ICE= 48A
01
2
3
VF (V)
0
20
40
60
80
100
-40°C
25°C
175°C
Fig. 9
- Typ. Diode Forward Voltage Drop
Characteristics
510
15
20
VGE (V)
0
2
4
6
8
10
12
ICE= 12A
ICE= 24A
ICE= 48A
0
2
4
6
8
10
VCE (V)
0
20
40
60
80
100
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 8
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 20µs
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= -40°C
Fig. 11
- Typical VCE vs. VGE
TJ = 25°C
Fig. 7
- Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
0
2
4
6
8
10
VCE (V)
0
20
40
60
80
100
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 6
- Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
0
2
4
6
8
10
VCE (V)
0
20
40
60
80
100
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V



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