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SD310 数据表(PDF) 2 Page - Calogic, LLC

部件名 SD310
功能描述  High-Speed Analog N-Channel DMOS FETs Improved On -Resistance
PDF  3 Pages
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制造商  CALOGIC [Calogic, LLC]
网页  http://www.calogic.net
标志 CALOGIC - Calogic, LLC

SD310 数据表(HTML) 2 Page - Calogic, LLC

  SD310 Datasheet HTML 1Page - Calogic, LLC SD310 Datasheet HTML 2Page - Calogic, LLC SD310 Datasheet HTML 3Page - Calogic, LLC  
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ABSOLUTE MAXIMUM RATINGS
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation at 25
oC Case Temperature . . . 1.2W
Storage Temperature Range . . . . . . . . . . . . . . -65
o to +200oC
Lead Temperature (1/16" from case for 10 sec.). . . . . . 300
oC
Operating Temperature Range . . . . . . . . . . . -55
oC to +125oC
PARAMETER
SD310
SD312
SD314
UNIT
VDS
Drain-to-source
+30
+10
+20
Vdc
VSD
Source-to-drain*
+10
+10
+20
Vdc
VDB
Drain-to-body
+30
+15
+25
Vdc
VSB
Source-to-body
+15
+15
+25
Vdc
VGS
Gate-to-source
±40
±40
±40
Vdc
VGB
Gate-to-body
±40
±40
±40
Vdc
VGD
Gate-to-drain
±40
±40
±40
Vdc
SD310 / SD312 / SD314
CORPORATION
SYMBOL
PARAMETER
SD310
SD312
SD314
UNITS
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
BREAKDOWN VOLTAGE
BVDS
Drain-to-source
30
35
V
VGS = VBS = 0V, ID = 10
µA
10
25
10
25
20
25
VGS = VBS = -5V, IS = 10nA
BVSD
Source-to drain
10
10
20
VGD = VBD = -5V, ID = 10nA
BVDB
Drain-to-body
15
15
25
VGB = 0V, source OPEN, ID = 10nA
BVSB
Source-to-body
15
15
25
VGB = 0V, drain OPEN, IS = 10
µA
LEAKAGE CURRENT
IDS (OFF)
Drain-to-source
110
1
10
nA
VGS = VBS = -5V, VDS = +10V
110
VGS = VBS = -5V, VDS = +20V
ISD (OFF)
Source-to-drain
110
1
10
VGS = VBD = -5V, VSD = +10V
110
VGS = VBD = -5V, VSD = +20V
IGBS
Gate
0.1
0.1
0.1
VDB = VSB = 0V, VGS =
±40V
VT
Threshold voltage
0.5
1.0
2.0
0.5
1.0
2.0
0.5
1.0
2.0
V
VDS = VGS = VT, IS = 1
µA, VSB = 0V
rDS (ON)
Drain-to-source
resistance
30
50
30
50
30
50
Ω
ID = 1.0mA, VSB = 0, VGS = +5V
20
35
20
35
20
35
ID = 1.0mA, VSB = 0, VGS = +10V
15
25
15
15
ID = 1.0mA, VSB = 0, VGS = +15V
SYMBOL
PARAMETER
SD310
SD312
SD314
UNITS
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
gfs
Forward
transconductance
15
20
15
20
15
20
mmhos
VDS = 10V, VSB = 0V, ID = 20mA,
f = 1kHz
SMALL SIGNAL CAPACITANCES (See capacitance model)
C(GS+GD+GB)
Gate node
2.4
3.7
2.4
3.7
2.4
3.7
pF
VDS = 10V, f = 1MHz
VGS = VBS = -15V
C(GD+DB)
Drain node
1.3
1.7
1.3
1.7
1.3
1.7
C(GS+SB)
Source node
3.5
4.5
3.5
4.5
3.5
4.5
CDG
Reverse transfer
0.3
0.7
0.3
0.7
0.3
0.7
AC ELECTRICAL CHARACTERISTICS
DC ELECTRICAL CHARACTERISTICS (TA = 25
oC, unless other specified.)



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