Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

July. 2013. Rev. 3.0

1/5

Features

■ High ruggedness

■ R

Ω)@V

■ Gate Charge (Typical 38nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent

avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant

topology like a electronic ballast, and also low power switching

mode power appliances.

N-channel TO-220 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

Drain to Source Voltage

400

V

10*

A

6.3*

A

Drain current pulsed

(note 1)

40

A

Gate to Source Voltage

±30

V

Single pulsed Avalanche Energy

(note 2)

1200

mJ

Repetitive Avalanche Energy

(note 1)

170

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5

V/ns

226

W

1.8

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

Thermal resistance, Junction to case

0.55

Thermal resistance, Case to Sink

0.5

Thermal resistance, Junction to ambient

58

BV

I

D

: 10A

R

1

2

3

1. Gate 2. Drain 3. Source

1

2

3

TO-220

SW740U

SAMWIN

Item

Sales Type

Marking

Package

Packaging

1

SW P 740U

SW740

TO-220

TUBE

Order Codes