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IRFHM830DPBF 数据表(PDF) 2 Page - International Rectifier |
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IRFHM830DPBF 数据表(HTML) 2 Page - International Rectifier |
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2 / 8 page  2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 16, 2013 IRFHM830DPbF D S G Thermal Resistance Parameter Typ. Max. Units RθJC (Bottom) Junction-to-Case f ––– 3.4 RθJC (Top) Junction-to-Case f ––– 37 °C/W RθJA Junction-to-Ambient g ––– 46 RθJA (<10s) Junction-to-Ambient g ––– 31 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 3.4 4.3 ––– 5.7 7.1 VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V VDS = VGS, ID = 50μA ΔVGS(th) Gate Threshold Voltage Coefficient ––– -6.0 ––– mV/°C VDS = VGS, ID = 1mA IDSS Drain-to-Source Leakage Current ––– ––– 500 μA ––– ––– 5 mA IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 69 ––– ––– S Qg Total Gate Charge ––– 27 ––– nC Qg Total Gate Charge ––– 13 20 Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.9 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.8 ––– Qgd Gate-to-Drain Charge ––– 4.5 ––– Qgodr Gate Charge Overdrive ––– 3.8 ––– See Fig.17 & 18 Qsw Switch Charge (Qgs2 + Qgd) ––– 6.3 ––– Qoss Output Charge ––– 10 ––– nC RG Gate Resistance ––– 1.1 ––– Ω td(on) Turn-On Delay Time ––– 9.8 ––– tr Rise Time ––– 20 ––– td(off) Turn-Off Delay Time ––– 9.1 ––– tf Fall Time ––– 6.7 ––– Ciss Input Capacitance ––– 1797 ––– Coss Output Capacitance ––– 363 ––– Crss Reverse Transfer Capacitance ––– 148 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode)à VSD Diode Forward Voltage ––– ––– 0.85 V trr Reverse Recovery Time ––– 16 24 ns Qrr Reverse Recovery Charge ––– 17 26 nC ton Forward Turn-On Time Time is dominated by parasitic Inductance VGS = 4.5V, ID = 20A e VGS = 4.5V Typ. ––– RG=1.8Ω VDS = 15V, ID = 20A VDS = 24V, VGS = 0V, TJ = 125°C mΩ ID = 20A VGS = 10V, VDS = 15V, ID = 20A TJ = 25°C, IF = 20A, VDD = 15V di/dt = 300A/μs eà TJ = 25°C, IS = 20A, VGS = 0V e showing the integral reverse p-n junction diode. MOSFET symbol VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 20A VGS = 0V VDS = 25V VDS = 15V ––– Conditions VGS = 0V, ID = 1mA Reference to 25°C, ID = 4mA VGS = 10V, ID = 20A e VGS = 20V VGS = -20V VDS = 24V, VGS = 0V Conditions See Fig.15 Max. 82 20 ƒ = 1.0MHz nA ns pF nC A 40h ––– ––– 160 ––– ––– |
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