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IRFP3006PBF 数据表(PDF) 2 Page - International Rectifier |
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IRFP3006PBF 数据表(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRFP3006PbF 2 www.irf.com © 2013 International Rectifier September 06, 2013 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.07 ––– V/°C Reference to 25°C, ID = 5mA RDS(on) Static Drain-to-Source On-Resistance ––– 2.1 2.5 m VGS = 10V, ID = 170A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 60V, VGS = 0V ––– ––– 250 VDS = 60V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V RG Internal Gate Resistance ––– 2.0 ––– Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 280 ––– ––– S VDS = 25V, ID = 170A Qg Total Gate Charge ––– 200 300 nC ID = 170A Qgs Gate-to-Source Charge ––– 37 ––– VDS =30V Qgd Gate-to-Drain ("Miller") Charge ––– 60 ––– VGS = 10V Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 140 ––– ID = 170A, VDS =0V, VGS = 10V td(on) Turn-On Delay Time ––– 16 ––– ns VDD = 39V tr Rise Time ––– 182 ––– ID = 170A td(off) Turn-Off Delay Time ––– 118 ––– RG = 2.7 tf Fall Time ––– 189 ––– VGS = 10V Ciss Input Capacitance ––– 8970 ––– pF VGS = 0V Coss Output Capacitance ––– 1020 ––– VDS = 50V Crss Reverse Transfer Capacitance ––– 534 ––– ƒ = 1.0 MHz, See Fig. 5 Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 1480 ––– VGS = 0V, VDS = 0V to 48V See Fig. 11 Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 1920 ––– VGS = 0V, VDS = 0V to 48V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 257 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 1028 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 170A, VGS = 0V trr Reverse Recovery Time ––– 44 ––– ns TJ = 25°C ––– 48 ––– TJ = 125°C Qrr Reverse Recovery Charge ––– 63 ––– nC TJ = 25°C ––– 77 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 2.4 ––– A TJ = 25°C Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A.Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. Junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.022mH, RG = 50, IAS = 170A,VGS =10V. Part not Recommended for use above this value. ISD ≤ 170A, di/dt ≤ 1360A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. * All spec data and curves based on (TO-220 Pak -IRFB3006PbF) Datasheet. D S G VR = 51V, IF = 170A di/dt = 100A/µs |
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