IRGS4064DPBF datasheet(1/11 Pages) IRF

部件名	IRGS4064DPBF

功能描述	Low Switching Losses Square RBSOA

PDF	11 Pages

Scroll/Zoom	100%

制造商	IRF [International Rectifier]

网页	http://www.irf.com

标志

1 / 11 page

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

IRGS4064DPbF

1

www.irf.com

02/16/12

VCES = 600V

IC = 10A, TC = 100°C

tsc > 5µs, Tjmax = 175°C

VCE(on) typ. = 1.6V

PD - 96424

GC

E

Gate

Collector

Emitter

E

G

n-channel

C

Features

• Low VCE (on) Trench IGBT Technology

• Low Switching Losses

• Maximum Junction temperature 175 °C

• 5μs SCSOA

• Square RBSOA

• 100% of The Parts Tested for (ILM)

• Positive VCE (on) Temperature Coefficient.

• Ultra Fast Soft Recovery Co-pak Diode

• Tighter Distribution of Parameters

• Lead-Free Package

Benefits

• High Efficiency in a Wide Range of Applications

• Suitable for a Wide Range of Switching Frequencies due

to Low VCE (ON) and Low Switching Losses

• Rugged Transient Performance for Increased Reliability

• Excellent Current Sharing in Parallel Operation

• Low EMI

D2Pak

C

E

C

G

Absolute Maximum Ratings

Parameter

Max.

Units

VCES

Collector-to-Emitter Breakdown Voltage

600

V

IC@ TC = 25°C

Continuous Collector Current

20

IC@ TC = 100°C

Continuous Collector Current

10

ICM

Pulsed Collector Current

40

ILM

Clamped Inductive Load Current

c

40

A

IF@TC=25°C

Diode Continuous Forward Current

20

IF@TC=100°C

Diode Continuous Forward Current

10

IFM

Diode Maximum Forward Current

d

40

Continuous Gate-to-Emitter Voltage

±20

V

Transient Gate-to-Emitter Voltage

±30

PD @ TC =25°

Maximum Power Dissipation

101

W

PD @ TC =100°

Maximum Power Dissipation

50

TJ

Operating Junction and

°C

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Thermal Resistance

Parameter

Min.

Typ.

Max.

Units

RθJC

Junction-to-Case - IGBT

e

–––

1.49

RθJC

Junction-to-Case - Diode

e

–––

3.66

RθCS

Case-to-Sink, flat, greased surface

–––

0.50

–––

RθJA

Junction-to-Ambient, typical socket mount

e

–––

40

Wt

Weight

1.5

g

°C/W

VGE

-55 to + 175

300 (0.063 in. (1.6mm) from case)

类似零件编号 - IRGS4064DPBF

制造商	部件名	数据表	功能描述
International Rectifier	IRGS4064DPBF	290Kb / 11P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier	IRGS4064DPBF	290Kb / 11P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

More results

类似说明 - IRGS4064DPBF

制造商	部件名	数据表	功能描述
IXYS Corporation	MWI50-12E7	130Kb / 4P	Short Circuit SOA Capability Square RBSOA
IXYS Corporation	MWI60-06G6K	90Kb / 2P	Sixpack Square RBSOA
International Rectifier	IRGB4045DPBF	387Kb / 10P	Low Switching Losses
HY ELECTRONIC CORP.	HYG15P120A1K1	1Mb / 8P	low switching losses
	HYG30P120H1K1	1Mb / 8P	low switching losses
	HYG75P120D1S	474Kb / 4P	low switching losses
Infineon Technologies A...	IGC136T170S8RH2	175Kb / 5P	low switching losses and saturation losses
International Rectifier	AUIRGDC0250	305Kb / 11P	Low Switching Losses
STMicroelectronics	STTH8BC065	47Kb / 3P	low switching losses 05-Nov-2010
Littelfuse	MG12150S-DEN2MM	1Mb / 5P	Low switching losses