Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

IRGS4615DPbF

IRGB4615DPbF

TO-220AB

IRGB4615DPbF

C

E

C

G

GC

E

Gate

Collector

Em itter

E

G

n-channel

C

IRGS4615DPbF

G

C

E

Applications

Features

Benefits

High efficiency in a wide range of applications and switching frequencies

Square RBSOA and maximum junction temperature 175°C

Improved reliability due to rugged hard switching performance and higher

power capability

parameters

Excellent current sharing in parallel operation

5μs short circuit SOA

Enables short circuit protection scheme

Lead-free, RoHS compliant

Environmentally friendly

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Base part number

Package Type

Orderable Part Number

Form

Quantity

IRGS4615DPbF

Tube

50

IRGS4615DPbF

IRGS4615DTRRPbF

Tape and Reel Right

800

IRGS4615DTRRPbF

IRGS4615DTRLPbF

Tape and Reel Left

800

IRGS4615DTRLPbF

IRGB4615DPbF

TO-220AB

Tube

50

IRGB4615DPbF

Standard Pack

D

Absolute Maximum Ratings

Parameter

Max.

Units

Collector-to-Emitter Breakdown Voltage

V

Continuous Collector Current

Continuous Collector Current

c

c

A

Diode Continuous Forward Current

Diode Continuous Forward Current

Diode Maximum Forward Current

d

Continuous Gate-to-Emitter Voltage

V

Transient Gate-to-Emitter Voltage

Maximum Power Dissipation

W

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Mounting Torque, 6-32 or M3 Screw

TO-220

-40 to + 175

10lbf. In (1.1 N.m)

± 20

± 30

99

50

°C

300

600

23

15

24

32

14

9

32

1

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October 25, 2013