2SA1908 datasheet(1/1 Pages) SANKEN

部件名	2SA1908

功能描述	Silicon PNP Epitaxial Planar Transistor

PDF	1 Pages

Scroll/Zoom	100%

制造商	SANKEN [Sanken electric]

网页	http://www.sanken-ele.co.jp/en

标志

1 / 1 page

36

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5100)

Application : Audio and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

Ratings

–120

–6

–8

–3

75(Tc=25°C)

150

–55 to +150

Unit

V

A

W

°C

sAbsolute maximum ratings

sElectrical Characteristics

sTypical Switching Characteristics (Common Emitter)

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

Ratings

–10max

–120min

50min

∗

–0.5max

20typ

300typ

Unit

µA

V

MHz

pF

Conditions

VCB=–120V

VEB=–6V

IC=–50mA

VCE=–4V, IC=–3A

IC=–3A, IB=–0.3A

VCE=–12V, IE=0.5A

VCB=–10V, f=1MHz

VCC

(V)

–40

RL

(

Ω)

10

IC

(A)

–4

VBB2

(V)

5

IB2

(A)

0.4

ton

(

µs)

0.14typ

tstg

(

µs)

1.40typ

tf

(

µs)

0.21typ

IB1

(A)

–0.4

2SA1908

(Ta=25°C)

I C– V CE Characteristics (Typical)

h FE– I C Characteristics (Typical)

Safe Operating Area (Single Pulse)

h FE– I C Temperature Characteristics (Typical)

I C– V BE Temperature Characteristics (Typical)

V CE(sat) – I B Characteristics (Typical)

Pc – T a Derating

0

–2

–4

–6

–8

–1

–2

–3

–4

Collector-Emitter Voltage V CE(V)

–200mA

–150mA

–25mA

–100mA

–75mA

–50mA

I B=–10mA

0

–3

–2

–1

0

–0.2

–0.4

–0.6

–0.8

–1.0

Base Current I B(A)

I C=–8A

–4A

–2A

0

–8

–6

–2

–4

0

–1.5

–1.0

–0.5

Base-Emittor Voltage V BE(V)

(V CE=–4V)

–0.02

–0.1

–0.5

–1

–8

–5

30

50

100

200

Collector Current I C(A)

(V CE=–4V)

Typ

DC

Without Heatsink

Natural Cooling

100ms

10ms

–10

–5

–50

–100 –150

–0.1

–1

–0.5

–10

–20

–5

Collector-Emitter Voltage V CE(V)

0.02

0.1

0.05

0.5

1

5

8

0

20

10

30

(V CE=–12V)

Emitter Current I E(A)

Typ

0.2

0.5

4

1

1 0

100

1000

2000

Time t(ms)

θj-a–t Characteristics

f T– I E Characteristics (Typical)

80

60

40

20

3.5

0

05 0

25

75

125

100

150

Ambient Temperature Ta(˚C)

Without Heatsink

(V CE=–4V)

–0.02

–0.1

–0.5

–1

–5

–8

30

50

100

300

Collector Current I C(A)

125˚C

25˚C

–30˚C

VBB1

(V)

–10

External Dimensions FM100(TO3PF)

4.4

1.5

BE

C

5.45±0.1

ø3.3±0.2

1.75

2.15

1.05

+0.2

-0.1

5.45±0.1

15.6±0.2

5.5±0.2

3.45

3.35

0.65

+0.2

-0.1

±0.2

0.8

a

b

Weight : Approx 6.5g

a. Part No.

b. Lot No.

∗hFE Rank O(50to100), P(70to140), Y(90to180)

类似零件编号 - 2SA1908

制造商	部件名	数据表	功能描述
Sanken electric	2SA1908	25Kb / 1P	Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)
Savantic, Inc.	2SA1908	190Kb / 4P	Silicon PNP Power Transistors
Quanzhou Jinmei Electro...	2SA1908	197Kb / 4P	Silicon PNP Power Transistors
Inchange Semiconductor ...	2SA1908	166Kb / 4P	Silicon PNP Power Transistors
New Jersey Semi-Conduct...	2SA1908	75Kb / 2P	Silicon PNP Power Transistor

More results

类似说明 - 2SA1908

制造商	部件名	数据表	功能描述
AUK corp	SUR532H	235Kb / 3P	Epitaxial planar PNP silicon transistor
	SUR546J	229Kb / 3P	Epitaxial planar PNP silicon transistor
	SUR550J	229Kb / 3P	Epitaxial planar PNP silicon transistor
Continental Device Indi...	CMBT857	115Kb / 3P	PNP EPITAXIAL PLANAR SILICON TRANSISTOR
Hi-Sincerity Mocroelect...	HSB649T	43Kb / 4P	SILICON PNP EPITAXIAL PLANAR TRANSISTOR
GTM CORPORATION	GI5706	948Kb / 3P	PNP EPITAXIAL PLANAR SILICON TRANSISTOR
Galaxy Semi-Conductor H...	KTA2015W	171Kb / 4P	PNP Silicon Epitaxial Planar Transistor
Galaxy Semi-Conductor H...	MMSTA92	131Kb / 2P	PNP Silicon Epitaxial Planar Transistor
Guangdong Kexin Industr...	2SA1772	44Kb / 2P	PNP Epitaxial Planar Silicon Transistor
SHENZHEN YONGERJIA INDU...	A92	207Kb / 4P	PNP Silicon Epitaxial Planar Transistor