CDLL5196 datasheet(1/2 Pages) CDI-DIODE

部件名	CDLL5196

功能描述	GENERAL PURPOSE SILICON DIODES

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制造商	CDI-DIODE [Compensated Deuices Incorporated]

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FIGURE 1

DESIGN DATA

CASE: DO-213AA, Hermetically sealed

glass case. (MELF, SOD-80, LL34)

LEAD FINISH: Tin / Lead

THERMAL RESISTANCE: (ROJEC):

100 ˚C/W maximum

THERMAL IMPEDANCE: (ZOJX): 70

˚C/W maximum

POLARITY: Cathode end is banded.

MOUNTING POSITION: Any.

MOUNTING SURFACE SELECTION:

The Axial Coefficient of Expansion

(COE) Of this Device is Approximately

+6PPM/°C. The COE of the Mounting

Surface System Should Be Selected To

Provide A Suitable Match With This

Device.

MILLIMETERS

INCHES

DIM

MIN

MAX

MIN

MAX

D

1.60

1.70

0.063 0.067

F

0.41

0.55

0.016 0.022

G

3.30

3.70

.130

.146

G1

2.54 REF.

.100 REF.

S

0.03 MIN.

.001 MIN.

22 COREY STREET, MELROSE, MASSACHUSETTS 02176

PHONE (781) 665-1071

FAX (781) 665-7379

WEBSITE: http://www.cdi-diodes.com

E-mail: mail@cdi-diodes.com

• AVAILABLE IN

JAN, JANTX AND JANTXV

PER MIL-PRF-19500/118

• GENERAL PURPOSE SILICON DIODES

• METALLURGICALLY BONDED

1N5194UR

1N5195UR

1N5196UR

CDLL5194

CDLL5195

CDLL5196

ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified

MAXIMUM RATINGS

Operating Temperature: -65°C to +175°C

Storage Temperature: -65°C to +175°C

Operating Current: 200 mA

Derating: 1.2mA/°C from 25ºC to 150ºC

1.0mA/°C from 150ºC to 175ºC

Forward Current: 650mA

VRM

VRWM

I O

I FSM

TYPE

TA = +150°C TP=1/120 S

TA=25ºC

V(pk)

mA

A

CDLL, 1N5194UR

80

70

200

50

2

CDLL, 1N5195UR

180

200

50

2

CDLL, 1N5196UR

250

225

200

50

2

VF

IR1 at VRWM

IR2 at VRM

IR3 at VRWM

TYPE

@100mA

TA=25ºC

TA = 150°C

V dc

nA dc

µA

µAdc

CDLL, 1N5194UR

0.8 - 1.0

25

100

5

CDLL, 1N5195UR

0.8 - 1.0

25

100

5

CDLL, 1N5196UR

0.8 - 1.0

25

100

5

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