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ADP2139ACBZ-1.0-R7 数据表(PDF) 4 Page - Analog Devices

部件名 ADP2139ACBZ-1.0-R7
功能描述  Compact, 800 mA, 3 MHz, Step-Down DC-to-DC Converter
PDF  20 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADP2139ACBZ-1.0-R7 数据表(HTML) 4 Page - Analog Devices

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ADP2138/ADP2139
Data Sheet
Rev. C | Page 4 of 20
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
VIN, EN, MODE
−0.4 V to +6.5 V
VOUT, SW to GND
−1.0 V to (VIN + 0.2 V)
Temperature Range
Operating Ambient
−40°C to +85°C
Operating Junction
−40°C to +125°C
Storage Temperature
−65°C to +150°C
Lead Temperature Range
−65°C to +150°C
Soldering (10 sec)
300°C
Vapor Phase (60 sec)
215°C
Infrared (15 sec)
220°C
ESD Model
Human Body
±1500 V
Charged Device
±500 V
Machine
±100 V
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL DATA
Absolute maximum ratings apply individually only, not in
combination.
ADP2138/ADP2139 can be damaged when the junction tempera-
ture limits are exceeded. Monitoring ambient temperature does
not guarantee that the junction temperature (TJ) is within the
specified temperature limits. In applications with high power
dissipation and poor thermal resistance, the maximum ambient
temperature may need to be derated. In applications with mod-
erate power dissipation and low printed circuit board (PCB)
thermal resistance, the maximum ambient temperature can
exceed the maximum limit for as long as the junction temperature
is within specification limits. The junction temperature (TJ) of
the device is dependent on the ambient temperature (TA), the
power dissipation of the device (PD), and the junction-to-ambient
thermal resistance of the package (θJA). Maximum junction
temperature (TJ) is calculated from the ambient temperature
(TA) and power dissipation (PD) using the formula
TJ = TA + (PD × θJA)
Junction-to-ambient thermal resistance (θJA) of the package is
based on modeling and calculation using a 4-layer board. The
junction-to-ambient thermal resistance is highly dependent on
the application and board layout. In applications where high
maximum power dissipation exists, close attention to thermal
board design is required. The value of θJA may vary, depending on
PCB material, layout, and environmental conditions. The specified
values of θJA are based on a 4-layer, 4 in. × 3 in., circuit board. Refer
to JEDEC JESD 51-9 for detailed information pertaining to board
construction. For additional information, see AN-617 Application
Note, MicroCSPTM
Wafer Level Chip Scale Package.
ΨJB is the junction-to-board thermal characterization parameter
measured in units of °C/W. ΨJB of the package is based on modeling
and calculation using a 4-layer board. The JESD51-12, Guidelines
for Reporting and Using Package Thermal Information, states that
thermal characterization parameters are not the same as thermal
resistances. ΨJB measures the component power flowing through
multiple thermal paths rather than through a single path, which
is the procedure for measuring thermal resistance, θJB. There-
fore, ΨJB thermal paths include convection from the top of the
package as well as radiation from the package; factors that make
ΨJB more useful in real-world applications than θJB. Maximum
junction temperature (TJ) is calculated from the board temperature
(TB) and power dissipation (PD) using the formula
TJ = TB + (PD × ΨJB)
Refer to JEDEC JESD51-8 and JESD51-12 for more detailed
information about ΨJB.
THERMAL RESISTANCE
θJA and ΨJB are specified for the worst-case conditions, that is, a
device soldered in a circuit board for surface-mount packages.
Table 4. Thermal Resistance
Package Type
θJA
ΨJB
Unit
6-Ball WLCSP
170
80
°C/W
ESD CAUTION



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