2SC5071 datasheet(1/1 Pages) SANKEN

部件名	2SC5071

功能描述	Silicon NPN Triple Diffused Planar Transistor

PDF	1 Pages

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制造商	SANKEN [Sanken electric]

网页	http://www.sanken-ele.co.jp/en

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125

Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)

Application : Switching Regulator and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

Ratings

500

400

10

12(Pulse24)

4

100(Tc=25°C)

150

–55 to +150

Unit

V

A

W

°C

sAbsolute maximum ratings

sElectrical Characteristics

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

Ratings

100max

400min

10 to 30

0.5max

1.3max

10typ

105typ

Unit

µA

V

MHz

pF

Conditions

VCB=500V

VEB=10V

IC=25mA

VCE=4V, IC=7A

IC=7A, IB=1.4A

VCE=12V, IE=–1A

VCB=10V, f=1MHz

2SC5071

(Ta=25°C)

I C– V CE Characteristics (Typical)

h FE– I C Characteristics (Typical)

t on•t stg•t f– I C Characteristics (Typical)

θj-a–t Characteristics

I C– V BE Temperature Characteristics (Typical)

VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)

Pc – T a Derating

Reverse Bias Safe Operating Area

Safe Operating Area (Single Pulse)

0

4

2

6

8

10

12

2

13

4

Collector-Emitter Voltage V CE(V)

600mA

400mA

200mA

800mA

1A

I B=100mA

0.02

0.1

0.05

1

5

10

0.5

0

1

(I C/I B=5)

Collector Current I C(A)

V BE(sat)

125˚C

(Case

Temp)

25˚C (Case

Temp)

–55˚C (Case

Temp)

–55˚C

V CE(sat)

12

5˚

C

0

12

10

8

6

4

2

0

1.0

0.5

Base-Emittor Voltage V BE(V)

(V CE=4V)

0.02

0.1

0.05

1

1 0 1 2

5

0.5

8

10

40

Collector Current I C(A)

(V CE=4V)

125˚C

25˚C

–30˚C

1

0.5

12

10

5

0.1

0.5

5

1

Collector Current I C(A)

t stg

t on

t f

V CC

200V

I C:I B1:I B2=10:1:–2

100

50

3.5

0

2 5

5 0

7 5

100

125

150

Ambient Temperature Ta(˚C)

Without Heatsink

10

50

5

500

100

1

0.5

0.1

10

30

5

Collector-Emitter Voltage V CE(V)

Without Heatsink

Natural Cooling

L=3mH

I B2 =1.0A

Duty:less than 1%

10

50

5

100

500

1

0.5

0.1

10

30

5

Collector-Emitter Voltage V CE(V)

100

µ

s

Without Heatsink

Natural Cooling

0.3

1

3

0.5

1

1 0

100

1000

Time t(ms)

sTypical Switching Characteristics (Common Emitter)

VCC

(V)

200

RL

(

Ω)

28.5

IC

(A)

7

VBB2

(V)

–5

IB2

(A)

–1.4

ton

(

µs)

1.0max

tstg

(

µs)

3.0max

tf

(

µs)

0.5max

IB1

(A)

0.7

VBB1

(V)

10

15.6±0.4

9.6

ø3.2±0.1

2

3

1.05

+0.2

-0.1

BE

5.45±0.1

C

4.8±0.2

0.65

+0.2

-0.1

1.4

2.0±0.1

a

b

External Dimensions MT-100(TO3P)

Weight : Approx 6.0g

a. Part No.

b. Lot No.

类似零件编号 - 2SC5071

制造商	部件名	数据表	功能描述
Sanken electric	2SC5071	25Kb / 1P	Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
Savantic, Inc.	2SC5071	174Kb / 4P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	2SC5071	189Kb / 4P	Silicon NPN Power Transistors
Inchange Semiconductor ...	2SC5071	160Kb / 4P	Silicon NPN Power Transistors
Savantic, Inc.	2SC5071	176Kb / 4P	Silicon NPN Power Transistors

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