ACST4-7SB datasheet(2/13 Pages) STMICROELECTRONICS

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Characteristics

ASCT4

2/13

Doc ID 8766 Rev 5

Characteristics

Table 2.

Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

IT(RMS)

On-state rms current (full sine wave)

TO-220FPAB

Tc = 102 °C

DPAK

Tc = 112 °C

DPAK with

0.5 cm2 copper

Tamb = 60 °C

ITSM

Non repetitive surge peak on-state current

Tj initial = 25 °C, ( full cycle sine wave)

F = 60 Hz

tp = 16.7 ms

F = 50 Hz

tp = 20 ms

I2tI2t for fuse selection

tp = 10 ms

A2s

dI/dt

Critical rate of rise on-state current

IG = 2 x IGT, (tr ≤ 100 ns)

F = 120 Hz

Tj = 125 °C

100

A/µs

VPP

Non repetitive line peak pulse voltage (1)

Tj = 25 °C

PG(AV)

Average gate power dissipation

Tj = 125 °C

0.1

PGM

Peak gate power dissipation (tp = 20 µs)

Tj = 125 °C

IGM

Peak gate current (tp = 20 µs)

Tj = 125 °C

1.6

Tstg

Storage temperature range

-40 to +150

°C

Operating junction temperature range

-40 to +125

°C

Maximum lead solder temperature during 10 ms (at 3 mm from plastic case)

260

°C

VINS(RMS) Insulation rms voltage

TO-220FPAB

1500

According to test described in IEC 61000-4-5 standard and Figure 19.

Table 3.

Electrical characteristics

Symbol

Test conditions

Quadrant

ACST410 ACST435

Unit

IGT

(1)

VOUT = 12 V, RL = 33 Ω

I - II - III

25 °C

MAX.

VGT

VOUT = 12 V, RL = 33 Ω

I - II - III

25 °C

MAX.

1.0

1.1

VGD

VOUT = VDRM, RL = 3.3 kΩ

I - II - III

125 °C

MIN.

0.2

(2)

IOUT = 500 mA

25 °C

MAX.

IG = 1.2 x IGT

I - II - III

25 °C

MAX.

dV/dt (2)

VOUT = 67 % VDRM, gate open

125 °C

MIN.

500

1000

V/µs

(dI/dt)c

(2)

Without snubber

125 °C

MIN.

A/ms

(dI/dt)c

(2)

(dV/dt)c = 15 V/µs

125 °C

A/ms

VCL

ICL = 0.1 mA, tp = 1 ms

25 °C

MIN.

850

Minimum IGT is guaranteed at 5% of IGT max

For both polarities of OUT pin referenced to COM pin

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