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ACST10 数据表(PDF) 3 Page - STMicroelectronics |
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ACST10 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 13 page ![]() ACST10 Characteristics Doc ID 15237 Rev 3 3/13 Table 4. Static characteristics Symbol Test conditions Value Unit VTM (1) IOUT = 14.1 A, tp = 500 µs Tj = 25 °C MAX. 1.5 V VT0 (1) Threshold voltage Tj = 125 °C MAX. 0.9 V Rd (1) Dynamic resistance Tj = 125 °C MAX. 35 m Ω IDRM IRRM VOUT = VDRM/ VRRM Tj = 25 °C MAX. 20 µA Tj = 125 °C MAX. 1.2 mA 1. For both polarities of OUT pin referenced to COM pin Table 5. Thermal characteristics Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) TO-220AB 1.7 °C/W TO-220FPAB 3.5 °C/W Rth(j-a) Junction to ambient TO-220AB TO-220FPAB 60 °C/W Figure 2. Maximum power dissipation vs. rms on-state current (full cycle) Figure 3. On-state rms current vs. case temperature (full cycle) P(W) 0 1 2 3 4 5 6 7 8 9 10 11 12 01 2 3 456 7 8 9 10 I (A) T(RMS) I (A) T(RMS) 0 1 2 3 4 5 6 7 8 9 10 11 0 25 50 75 100 125 TO-220FPAB TO-220AB T (°C) C Figure 4. On-state rms current vs. ambient temperature (free air convection full cycle) Figure 5. Relative variation of thermal impedance vs. pulse duration I (A) T(RMS) 0,0 0,5 1,0 1,5 2,0 2,5 3,0 0 25 50 75 100 125 Tamb(°C) K=[Z /R ] th th 1.0E-02 1.0E-01 1.0E+00 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Z th(j-a) TO -220AB TO-220FPAB TO-220AB TO-220FPAB tp(s) Z th(j-c) |
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