CMPTH10 datasheet(1/2 Pages) CENTRAL

部件名	CMPTH10

功能描述	NPN SILICON RF TRANSISTOR

PDF	2 Pages

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制造商	CENTRAL [Central Semiconductor Corp]

网页	http://www.centralsemi.com

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1 / 2 page

Central

Semiconductor Corp.

TM

208

MAXIMUM RATINGS (TA=25oC)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCEO

25

V

Emitter-Base Voltage

VEBO

3.0

V

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

oC

Thermal Resistance

ΘJA

357

oC/W

ELECTRICAL CHARACTERISTICS (TA=25

oC unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=25V

100

nA

IEBO

VEB=2.0V

100

nA

BVCBO

IC=100µA

30

V

BVCEO

IC=1.0mA

25

V

BVEBO

IE=10µA

3.0

V

VCE(SAT)

IC=4.0mA, IB=0.4mA

0.50

V

VBE(ON)

VCE=10V, IB=4.0mA

0.95

V

hFE

VCE=10V, IC=4.0mA

60

fT

VCE=10V, IC=4.0mA, f=100MHz

650

MHz

Ccb

VCB=10V, IE=0, f=1.0MHz

0.70

pF

Crb

VCB=10V, IE=0, f=1.0MHz

0.65

pF

rb’Cc

VCB=10V, IC=4.0mA, f=31.8MHz

9.0

ps

CMPTH10

NPN SILICON RF TRANSISTOR

SOT-23 CASE

DESCRIPTION:

The

CENTRAL

SEMICONDUCTOR

CMPTH10 type is an NPN silicon RF transistor

manufactured by the epitaxial planar process,

epoxy molded in a surface mount package,

designed for low noise UHF/VHF amplifier and

high output oscillator applications.

Marking code is C3E.

类似零件编号 - CMPTH10

制造商	部件名	数据表	功能描述
Central Semiconductor C...	CMPTH10-BK	642Kb / 5P	NPN - RF Transistor Die 50mA, 25 Volt R2 9-November 2017
	CMPTH10-TR	642Kb / 5P	NPN - RF Transistor Die 50mA, 25 Volt R2 9-November 2017
	CMPTH10	328Kb / 2P	SURFACE MOUNT NPN SILICON RF TRANSISTOR
	CMPTH10	328Kb / 2P	SURFACE MOUNT NPN SILICON RF TRANSISTOR

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