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JSST177 数据表(PDF) 2 Page - Vishay Siliconix

部件名 JSST177
功能描述  P-Channel JFETs
PDF  7 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

JSST177 数据表(HTML) 2 Page - Vishay Siliconix

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J/SST174/175/176/177 Series
Vishay Siliconix
www.vishay.com
9-2
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage
30 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-Source Voltage
30 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current
–50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
–55 to 150
_C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
–55 to 150
_C
. . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.)
300
_C
. . . . . . . . . . . . . . . . . . .
Power Dissipationa
350 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a.
Derate 2.8 mW/
_C above 25_C
SPECIFICATIONS FOR J/SST174 AND J/SST175 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST174
J/SST175
Parameter
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Unit
Static
Gate-Source Breakdown Voltage
V(BR)GSS
IG = 1 mA , VDS = 0 V
45
30
30
Gate-Source Cutoff Voltage
VGS(off)
VDS = –15 V, ID = –10 nA
5
10
3
6
V
Saturation Drain Currentb
IDSS
VDS = –15 V, VGS = 0 V
–20
–135
–7
–70
mA
VGS = 20 V, VDS = 0 V
0.01
1
1
Gate Reverse Current
IGSS
TA = 125_C
5
Gate Operating Current
IG
VDG = –15 V, ID = –1 mA
0.01
nA
VDS = –15 V, VGS = 10 V
–0.01
–1
–1
Drain Cutoff Current
ID(off)
TA = 125_C
–5
Drain-Source On-Resistance
rDS(on)
VGS = 0 V, VDS = –0.1 V
85
125
W
Gate-Source Forward Voltage
VGS(F)
IG = –1 mA , VDS = 0 V
–0.7
V
Dynamic
Common-Source
Forward Transconductance
gfs
VDS = –15 V, ID = –1 mA
4.5
mS
Common-Source
Output Conductance
gos
VDS = –15 V, ID = –1 mA
f = 1 kHz
20
mS
Drain-Source On-Resistance
rds(on)
VGS = 0 V, ID = 0 mA , f = 1 kHz
85
125
W
Common-Source Input Capacitance
Ciss
VDS = 0 V, VGS = 0 V, f = 1 MHz
20
Common-Source
Reverse Transfer Capacitance
Crss
VDS = 0 V, VGS = 10 V
f = 1 MHz
5
pF
Equivalent Input Noise Voltage
en
VDG = –10 V, ID = –1 mA
f = 1 kHz
20
nV
⁄
√Hz
Switching
td(on)
10
Turn-On Time
tr
VGS(L) = 0 V, VGS(H) = 10 V
15
td(off)
GS(L)
GS(H)
See Switching Circuit
10
ns
Turn-Off Time
tf
20
Notes
a.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
PSCIA
b.
Pulse test: PW
v300 ms duty cycle v3%.



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