TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C

3

Motorola Bipolar Power Transistor Device Data

t, TIME (ms)

1.0

0.01

0.01

0.1

1.0

1.0

100

Z

θJC(t) = r(t) RθJC

R

θJC = 1.92°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) Z

θJC(t)

P(pk)

t1

t2

SINGLE PULSE

1.0 k

D = 0.5

0.2

0.05

DUTY CYCLE, D = t1/t2

Figure 4. Thermal Response

0.1

0.05

0.02

0.01

0.03

0.02

0.07

0.5

0.3

0.2

0.7

0.02

0.05

0.2

0.5

2.0

5.0

200

500

10

20

50

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

10

20

5.0

60

100

Figure 5. Active–Region Safe Operating Area

0.2

0.1

0.5

SECONDARY BREAKDOWN LTD

BONDING WIRE LTD

THERMAL LIMITATION @ TC = 25°C

(SINGLE PULSE)

1.0 ms

2.0

1.0

10

5.0

0.5 ms

CURVES APPLY BELOW RATED VCEO

3.0

0.3

40

80

5.0 ms

TJ = 150°C

TIP41A, TIP42A

TIP41B, TIP42B

TIP41C, TIP42C

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150 _C. TJ(pk) may be calculated from the data in

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

0.1

0.4

0.6

4.0

0.06

1.0

2.0

0.2

IC, COLLECTOR CURRENT (AMP)

Figure 6. Turn–Off Time

5.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

6.0

1.0

3.0

5.0

20

0.5

10

2.0

VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

300

200

100

70

50

30

30

50

TJ = 25°C

VCC = 30 V

IC/IB = 10

IB1 = IB2

Cib

Cob

3.0

ts

tf

TJ = 25°C