2SC2625

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 3

www.unisonic.com.tw

QW-R214-009,B

TYPICAL CHARACTERISTICS

700mA

0

0

900m

A

500mA

300mA

200mA

246

8

10

12

14

2

4

6

8

10

12

14

Collector Output Characteristics

1

0.03

25℃

-20℃

-40℃

3

5

10

30

50

100

200

300

0.05 0.1

0.3 0.5

1

3

5

10

DC Current Gain

0.03

0.05 0.1

0.3 0.5

1

3

5

10

Base and Collector Saturation Voltage

0.01

0.03

0.05

0.1

0.3

0.5

1

3

500

Safe Operating Area

0.03

0.1

Single Pulse

50μs

100μs

200μs

500μs

300

100

50

30

10

5

3

1

0.05

0.3

0.5

1

3

5

10

30

0.3

0.5

1

3

5

10

Switching Time

0.1

0.5

1

3

0.3

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.