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RJS6004TDPEJ 数据表(PDF) 1 Page - Renesas Technology Corp |
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RJS6004TDPEJ 数据表(HTML) 1 Page - Renesas Technology Corp |
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1 / 4 page  R07DS0896EJ0300 Rev.3.00 Page 1 of 3 Jan 23, 2014 Preliminary Datasheet RJS6004TDPP-EJ 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline 1 2 1. Cathode 2. Anode 2 1 RENESAS Package code: PRSS0002ZA-A (Package name: TO-220FP-2L) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Maximum reverse voltage VRM 600 V Continuous forward current IF 10 A Peak surge forward current IFSM 60 A Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Forward voltage VF ⎯ 1.5 1.8 V IF = 10 A Reverse current IR ⎯ ⎯ 10 μA VR = 600 V Reverse recovery time trr ⎯ 15 ⎯ ns IF = 10 A, di/dt = 300 A/ μs R07DS0896EJ0300 Rev.3.00 Jan 23, 2014 |
类似零件编号 - RJS6004TDPEJ |
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类似说明 - RJS6004TDPEJ |
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