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RJS6004WDPK 数据表(PDF) 1 Page - Renesas Technology Corp |
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RJS6004WDPK 数据表(HTML) 1 Page - Renesas Technology Corp |
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1 / 4 page  R07DS0897EJ0300Rev.3.00 Page 1 of 3 Jan 29, 2014 Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline 1. Anode 2. Cathode 3. Anode 4. Cathode 1 2, 4 3 RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 4 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Maximum reverse voltage VRM 600 V Continuous forward current IF Note1 10/20 A Peak surge forward current IFSM Note1 60/120 A Junction to case thermal impedance θj-c 0.9 °C/W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. Per leg/device Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Forward voltage VF Note2 ⎯ 1.5 1.8 V IF = 10 A Reverse current IR Note1 ⎯ ⎯ 10/20 μA VR = 600 V Reverse recovery time trr Note2 ⎯ 15 ⎯ ns IF = 10 A, di/dt = 300A/ μs Notes: 1. Per leg/device 2. Per leg R07DS0897EJ0300 Rev.3.00 Jan 29, 2014 |
类似零件编号 - RJS6004WDPK |
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类似说明 - RJS6004WDPK |
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