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Document Number: 91055

4

S11-1049-Rev. C, 30-May-11

This document is subject to change without notice.

IRF740S, SiHF740S

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

C

iss

C

rss

C

oss

V

C

C

C

91055_05

2500

2000

1500

1000

0

500

91055_06

I

V

For test circuit

see figure 13

V

V

20

16

12

8

0

4

0

15

75

60

45

30

0.50

1.30

1.10

0.90

0.70

25

150

V

91055_07

1.50

91055_08

Operation in this area limited

by R

DS(on)

T

T

Single Pulse

2

5

1

2

5

2

5

2

5

0.1

1

10

25

2

5

2

5

2

5

0.1

10