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IXTY08N100P 数据表(PDF) 1 Page - IXYS Corporation

部件名 IXTY08N100P
功能描述  N-Channel Enhancement Mode Avalanche Rated
PDF  4 Pages
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制造商  IXYS [IXYS Corporation]
网页  http://www.ixys.com
标志 IXYS - IXYS Corporation

IXTY08N100P 数据表(HTML) 1 Page - IXYS Corporation

  IXTY08N100P Datasheet HTML 1Page - IXYS Corporation IXTY08N100P Datasheet HTML 2Page - IXYS Corporation IXTY08N100P Datasheet HTML 3Page - IXYS Corporation IXTY08N100P Datasheet HTML 4Page - IXYS Corporation  
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© 2009 IXYS CORPORATION, All Rights Reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
1000
V
V
DGR
T
J
= 25
°C to 150°C, R
GS = 1MΩ
1000
V
V
GSS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
C = 25°C
0.8
A
I
DM
T
C = 25°C, Pulse Width Limited by TJM
1.5
A
I
A
T
C = 25°C
0.8
A
E
AS
T
C = 25°C80
mJ
dV/dt
I
S
≤ I
DM, VDD ≤ VDSS, TJ ≤ 150°C
10
V/ns
P
D
T
C = 25°C42
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6mm (0.062) from Case for 10s
300
°C
T
SOLD
Plastic Body for 10s
260
°C
M
d
Mounting Torque
(TO-220)
1.13 / 10
Nm/lb.in.
Weight
TO-263
2.50
g
TO-220
3.00
g
TO-252
0.35
g
DS99865C(04/09)
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
BV
DSS
V
GS = 0V, ID = 250μA
1000
V
V
GS(th)
V
DS = VGS, ID = 50μA
2.0
4.0
V
I
GSS
V
GS = ±20V, VDS = 0V
±50 nA
I
DSS
V
DS = VDSS, VGS= 0V
3 μA
T
J = 125°C
100 μA
R
DS(on)
V
GS = 10V, ID = 0.5 • ID25, Note 1
17
20
Ω
PolarTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA08N100P
IXTP08N100P
IXTY08N100P
V
DSS
= 1000V
I
D25
= 0.8A
R
DS(on)
≤≤≤≤ 20Ω
Ω
Ω
Ω
Ω
Features
International Standard Packages
Avalanche Rated
Low Package Inductance
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Switched-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
G = Gate
D
= Drain
S = Source
TAB = Drain
TO-263 (I
XTA)
TO-220 (I
XTP)
D
(TAB)
G
S
G
S
(TAB)
G
S
(TAB)
TO-252 (IXTY)


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