2SA1013

PNP EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R208-049.B



°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

-160

V

Collector-Emitter Voltage

-160

V

Emitter-Base Voltage

-6

V

Collector Current

-1

A

Base Current

-0.5

A

Collector Power Dissipation

SOT-89

500

W

TO-92/TO-92NL

900

W

Junction Temperature

150

°C

Storage Temperature

-55 ~150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector Cut-Off Current

-1.0

µA

Emitter Cut-Off Current

-1.0

µA

Collector-Emitter Breakdown Voltage

-160

V

DC Current Gain

60

320

Collector-Emitter Saturation Voltage

-1.5

V

Base-Emitter Voltage

-0.45

-0.75

V

Transition Frequency

15

50

MHz

Collector Output Capacitance

35

pF



RANK

R

O

P

RANGE

60~120

100~200

160~320