2SC2383

Preliminary

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R201-086.a

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

160

V

Collector-Emitter Voltage

160

V

Emitter-Base Voltage

6

V

Collector Current

1

A

Base Current

0.5

A

Collector Power Dissipation

Pc

900

mW

Junction Temperature

+150

°C

Storage Temperature

-55 ~150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector Cut-Off Current

1

µA

Emitter Cut-Off Current

1

µA

Collector-Emitter Breakdown Voltage

160

V

DC Current Gain

60

320

Collector-Emitter Saturation Voltage

1.5

V

Base-Emitter On Voltage

0.45

0.75

V

Current Gain Bandwidth Product

20

100

MHz

Output Capacitance

20

pF

CIASSIFICATION

R

O

Y

60~120

100-200

160-320