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2SC4467 数据表(PDF) 4 Page - Unisonic Technologies |
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2SC4467 数据表(HTML) 4 Page - Unisonic Technologies |
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4 / 4 page ![]() 2SC4467 NPN EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 4 of 4 www.unisonic.com.tw QW-R214-018.B TYPICAL CHARACTERISTICS 0 Emitter Current vs. Emitter-Base Voltage 48 12 Emitter-Base Voltage, VEBO (V) 0 10 20 30 40 50 60 20 1.5 2 2.5 0 1 2 3 4 0 Collector Current vs. Collector-Emitter Voltage Collector-Emitter Voltage, VCE (V) 0.5 1 16 3 5 6 IB=40mA IB=20mA IB=60mA IB=80mA IB=100mA IB=120mA IB=140mA IB=160mA IB=180mA IB=200mA UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. |
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