2SK545G-B10-AE3-R datasheet(2/3 Pages) UTC

2 / 3 page

2SK545

Preliminary

JFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R216-102.a

ABSOLUTE MAXIMUM RATINGS (T

A=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Drain Voltage

VGDS

-40

Gate Current

Drain Current

Power Dissipation

125

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T

A =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Gate-to-Drain Breakdown Voltage

V(BR)GDS

ID=-10µA, VDS=0V

-40

Gate-to-Source Leakage Current

IGSS

VGS=-20V, VDS=0V

-500

Zero-Gate Voltage Drain Current

IDSS

VDS=10V, VGS=0V

300

µA

Cutoff Voltage

VGS(OFF)

VDS=10V, ID=1µA

-1.5

-4.0

Forward Transfer Admittance

|yfs|

VGS=0V, VDS=10V, f=1.0KHz

0.05 0.13

Input Capacitance

CISS

VGS=0V, VDS=10V, f=1.0MHz

1.7

Reverse Transfer Capacitance

CRSS

0.7

CLASSIFICATION OF IDSS

RANK

B10

B11

B12

RANGE

30~80

60~180

150~300

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