12N25

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-757.C

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

250

V

Gate-Source Voltage

±20

V

Drain Current

12

A

Pulsed (Note 2)

48

A

Single Pulsed Avalanche Energy

474

mJ

Power Dissipation

TO-220

73

W

TO-252

30

W

Junction Temperature

+150

°C

Storage Temperature Range

-55~+150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220

62.5

°C/W

TO-252

100

°C/W

Junction to Case

TO-220

1.7

°C/W

TO-252

4.1

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

250

V

Drain-Source Leakage Current

1

µA

Gate- Source Leakage Current

Forward

+100 nA

Reverse

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

0.34 0.5

Ω

DYNAMIC PARAMETERS

Input Capacitance

3000 pF

Output Capacitance

900

pF

Reverse Transfer Capacitance

400

pF

SWITCHING PARAMETERS

Turn-ON Delay Time

(Note 1, 2)

14

50

ns

Rise Time

80

150

ns

Turn-OFF Delay Time

90

200

ns

Fall-Time

80

170

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

1.4

V

Maximum Body-Diode Continuous Current

12

A

Maximum Body-Diode Pulsed Current

48

A

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature