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13002AGL-T92-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 13002AGL-T92-R
功能描述  HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

13002AGL-T92-R 数据表(HTML) 2 Page - Unisonic Technologies

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13002AG
Preliminary
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R201-090.b
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector Emitter Voltage (VBE = 0)
VCES
700
V
Collector Emitter Voltage (IB = 0)
VCEO
400
V
Emitter Base Voltage (IC = 0)
VEBO
9
V
Collector Current
IC
0.75
A
Collector Peak Current (tp < 5 ms)
ICM
0.5
A
Base Current
IB
0.4
A
Base Peak Current (tp < 5 ms)
IBM
0.75
A
Total Dissipation at Ta = 25°C
PD
0.95
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERAMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Thermal Resistance Junction-ambient
θJA
130
°C /W
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector Emitter Sustaining Voltage (IB = 0)
(Note)
VCEO(SUS) IC = 1 mA
700
V
Collector Emitter Saturation Voltage (Note)
VCE(SAT)
IC = 0.2 A , IB = 40 mA
0.2
0.5
V
IC = 0.3 A , IB = 75 mA
0.3
1
IC = 0.4 A , IB = 135 mA
0.4
1.5
Base Emitter Saturation Voltage (Note)
VBE(SAT)
IC = 0.2 A , IB = 40 mA
1
V
IC = 0.3 A , IB = 75 mA
1.2
Emitter Cut off Current (IC = 0)
IEBO
VEB = 9 V
1
mA
Collector Cut off Current (VBE = -1.5V)
ICEV
VCE = 700 V
250
μ A
DC Current Gain
hFE*
IC = 0.2 A, VCE = 5 V
12
27
IC = 0.4 A, VCE = 5 V
7
20
Inductive Load Fall Time
tF
IC = 0.2 A , VCLAMP = 300 V
IB1 = -IB2 = 40 mA , L = 3 mH
0.3
μ s
Note: Pulsed: Pulse duration = 300μs, duty cycle = 1.5 %



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