13003ADGL-T92-R datasheet(4/5 Pages) UTC

4 / 5 page

13003ADG

Preliminary

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

4 of 5

www.unisonic.com.tw

QW-R223-023.b



ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

(Note)

Collector-Emitter Sustaining Voltage

VCEO(SUS)

IC=10mA , IB=0

400

Collector Cutoff Current

TC=25°C

ICEO

VCEO=Rated Value,

VBE(OFF)=1.5 V

TC=100°C

Emitter Cutoff Current

IEBO

VEB=9V, IC=0

SECOND BREAKDOWN

Second Breakdown Collector Current with bass

forward biased

Is/b

See Fig.5

Clamped Inductive SOA with base reverse biased

RBSOA

See Fig.6

ON CHARACTERISTICS

(Note)

DC Current Gain

hFE1

IC=0.5A, VCE=5V

hFE2

IC=1A, VCE=5V

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=0.5A, IB=0.1A

0.5

IC=1A, IB=0.25A

IC=1.5A, IB=0.5A

IC=1A, IB=0.25A, TC=100°C

Base-Emitter Saturation Voltage

VBE(SAT)

IC=0.5A, IB=0.1A

IC=1A, IB=0.25A

1.2

IC=1A, IB=0.25A, TC=100°C

1.1

DYNAMIC CHARACTERISTICS

Current-Gain-Bandwidth Product

IC=100mA, VCE=10V, f=1MHz

MHz

Output Capacitance

COB

VCB=10V, IE=0, f=0.1MHz

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

VCC=125V, IC=1A, B1=IB2=0.2A,

tP=25μs, Duty Cycle≤1%

0.05 0.1

μs

Rise Time

0.5

μs

Storage Time

μs

Fall Time

0.4

0.7

μs

Inductive Load, Clamped (Table 1)

Storage Time

tSTG

IC=1A, VCLAMP=300V, IB1=0.2A,

VBE(OFF)=5VDC, TC=100°C

1.7

μs

Crossover Time

0.29 0.75

μs

Fall Time

0.15

μs

Diode Forward Voltage

IF=0.5A

1.5

Note: Pulse Test: PW=300μs, Duty Cycle≤2%

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