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K1875L-V-AL3-R 数据表(PDF) 2 Page - Unisonic Technologies |
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K1875L-V-AL3-R 数据表(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() K1875 Preliminary JFET UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R206-103.a ABSOLUTE MAXIMUM RATINGS (T A=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate-Drain Voltage VGDS -20 V Gate-Current IG 10 mA Drain Power Dissipation PD 100 mW Junction Temperature TJ 125 °C Storage Temperature Range TSTG -55~125 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (T A =25 °C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Gate Leakage Current IGSS VGS=-15V, VDS=0V -1.0 nA Gate-Drain Breakdown Voltage V(BR)GDS VDS=0V, IG=-100µA -20 V Drain Current IDSS VDS=5V, VGS=0V 6 32 mA Gate-Source Cut-Off Voltage VGS (OFF) VDS=5V, ID=1µA -2.5 V Forward Transfer Admittance |Yfs| VDS=5V, VGS=0V, f=1kHz 15 25 mS Input Capacitance Ciss VDS=5V, VGS=0V, f=1MHz 7.5 10 pF Reverse Transfer Capacitance Crss VDG=5V, ID=0V, f=1MHz 2 3 pF CLASSIFICATION OF IDSS RANK GR BL V RANGE 6~12 10~20 16~32 |
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