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MMBTA42G-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 MMBTA42G-AE3-R
功能描述  HIGH VOLTAGE TRANSISTOR
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

MMBTA42G-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

  MMBTA42G-AE3-R Datasheet HTML 1Page - Unisonic Technologies MMBTA42G-AE3-R Datasheet HTML 2Page - Unisonic Technologies MMBTA42G-AE3-R Datasheet HTML 3Page - Unisonic Technologies MMBTA42G-AE3-R Datasheet HTML 4Page - Unisonic Technologies  
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MMBTA42/43
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R206-004,F
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
MMBTA42
VCBO
300
V
MMBTA43
200
Collector-Emitter Voltage
MMBTA42
VCEO
300
V
MMBTA43
200
Emitter-Base Voltage
VEBO
6
V
Collector Dissipation (Ta=25°C)
PC
350
mW
Collector Current
IC
500
mA
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied
ELECTRICAL CHARACTERISTICS (T
J=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown
Voltage
MMBTA42
BVCBO
IC=100μA, IE=0
300
V
MMBTA43
200
Collector-Emitter Breakdown
Voltage
MMBTA42
BVCEO
IC =1mA, IB=0
300
V
MMBTA43
200
Emitter-Base Breakdown Voltage
BVEBO
IE=100μA, IC =0
6
V
Collector-Emitter Saturation Voltage
VCE(SAT)
IC =20mA, IB=2mA
0.2
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC =20mA, IB=2mA
0.90
V
Collector Cut-Off Current
MMBTA42
ICBO
VCB=200V, IE=0
100
nA
MMBTA43
VCB=160V, IE=0
100
Emitter Cut-Off Current
MMBTA42
IEBO
VEB=6V, IC =0
100
nA
MMBTA43
VEB=4V, IC =0
100
DC Current Gain
hFE
VCE=10V, IC =1mA
80
VCE=10V, IC =10mA
80
300
VCE=10V, IC =30mA
80
Current Gain Bandwidth Product
fT
VCE=20V, IC=10mA
f=100MHz
50
MHz
Collector Base Capacitance
MMBTA42
Ccb
VCB=20V, IE=0, f=1MHz
3
pF
MMBTA43
4



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