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MMDT5551G-AL6-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 MMDT5551G-AL6-R
功能描述  HIGH VOLTAGE SWITCHING TRANSISTOR
PDF  3 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

MMDT5551G-AL6-R 数据表(HTML) 2 Page - Unisonic Technologies

  MMDT5551G-AL6-R Datasheet HTML 1Page - Unisonic Technologies MMDT5551G-AL6-R Datasheet HTML 2Page - Unisonic Technologies MMDT5551G-AL6-R Datasheet HTML 3Page - Unisonic Technologies  
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MMDT5551
Preliminary
DUAL TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R218-022.b
ABSOLUATE MAXIUM RATINGS (T
A= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector -Base Voltage
VCBO
180
V
Collector -Emitter Voltage
VCEO
160
V
Emitter -Base Voltage
VEBO
6
V
DC Collector Current
IC
600
mA
Power Dissipation
PD
200
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (T
A = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
VCBO
IC=100μA, IE=0
180
V
Collector-Emitter Breakdown Voltage
VCEO
IC=1mA, IB=0
160
V
Emitter-Base Breakdown Voltage
VEBO
IE=10μA, IC=0
6
V
Collector Cut-off Current
ICBO
VCB=120V, IE=0
50
nA
Emitter Cut-off Current
IEBO
VBE=4V, IC =0
50
nA
DC Current Gain(note)
hFE
VCE=5V, IC =1mA
80
VCE=5V, IC =10mA
80
160
400
VCE=5V, IC =50mA
80
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=10mA, IB=1mA
0.15
V
IC=50mA, IB=5mA
0.2
Base-Emitter Saturation Voltage
VBE(SAT)
IC=10mA, IB=1mA
1
V
IC=50mA, IB=5mA
1
Current Gain Bandwidth Product
fT
VCE=10V, IC =10mA, f=100MHz
100
300
MHz
Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
6.0
pF
Noise Figure
NF
IC=0.25mA, VCE=5V
RS=1kΩ, f=10Hz ~ 15.7kHz
8
dB
Note: Pulse test: PW<300
μs, Duty Cycle<2%



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