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UD4606ZG-S08-R 数据表(PDF) 4 Page - Unisonic Technologies

部件名 UD4606ZG-S08-R
功能描述  DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)
PDF  6 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UD4606ZG-S08-R 数据表(HTML) 4 Page - Unisonic Technologies

  UD4606ZG-S08-R Datasheet HTML 1Page - Unisonic Technologies UD4606ZG-S08-R Datasheet HTML 2Page - Unisonic Technologies UD4606ZG-S08-R Datasheet HTML 3Page - Unisonic Technologies UD4606ZG-S08-R Datasheet HTML 4Page - Unisonic Technologies UD4606ZG-S08-R Datasheet HTML 5Page - Unisonic Technologies UD4606ZG-S08-R Datasheet HTML 6Page - Unisonic Technologies  
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UD4606Z
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 6
www.unisonic.com.tw
QW-R502-763.a
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
N-CHANNEL
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
30
V
Drain-Source Leakage Current
IDSS
VDS=24V,VGS=0V
1
µA
Gate-Source Leakage Current
IGSS
VDS=0V ,VGS=±20V
±
5
µA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1
1.9
3
V
Drain-Source On-State Resistance
2
RDS(ON)
VGS=10V,ID=6.9A
22.5
28
mΩ
VGS=4.5V, ID=5A
34.5
42
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=15V,VGS=0V,f =1MHz
680
pF
Output Capacitance
COSS
102
pF
Reverse Transfer Capacitance
CRSS
77
pF
SWITCHING PARAMETERS
Total Gate Charge
2
QG
VDS=15V, VGS=10V, ID=6.9A
13.8
nC
Gate-Source Charge
QGS
1.82
nC
Gate-Drain Charge
QGD
3.2
nC
Turn-ON Delay Time
2
tD(ON)
VDS=15V, VGS=10V, RG=3Ω,
RL=2.2Ω
4.6
ns
Turn-ON Rise Time
tR
4.1
ns
Turn-OFF Delay Time
tD(OFF)
20.6
ns
Turn-OFF Fall Time
tF
5.2
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Continuous Forward Current
3
IS
3
A
Drain-Source Diode Forward Voltage
2
VSD
IS =6.9A, VGS=0V
0.76
1
V
P-CHANNEL
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250µA
-30
V
Drain-Source Leakage Current
IDSS
VDS=-24V,VGS=0V
-1
µA
Gate-Source Leakage Current
IGSS
VDS=0V ,VGS=±20V
±5
μ
A
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-1.2
-2
-2.4
V
Drain-Source On-State Resistance
2
RDS(ON)
VGS=-10V,ID=-6A
28
35
mΩ
VGS=-4.5V, ID=-5A
44
58
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=-15V,VGS=0V,f =1MHz
920
pF
Output Capacitance
COSS
190
pF
Reverse Transfer Capacitance
CRSS
122
pF
SWITCHING PARAMETERS
Total Gate Charge
2
QG
VDS=-15V,VGS=-10V,ID=-6A
18.5
nC
Gate-Source Charge
QGS
2.7
nC
Gate-Drain Charge
QGD
4.5
nC
Turn-ON Delay Time
2
tD(ON)
VDS=-15V,VGS=-10V,RG=3Ω,
RL=2.7Ω
7.7
ns
Turn-ON Rise Time
tR
5.7
ns
Turn-OFF Delay Time
tD(OFF)
20.2
ns
Turn-OFF Fall Time
tF
9.5
ns



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