UH11K

Preliminary

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R218-027.A



PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

50

V

Collector-Emitter Voltage

50

V

Collector Current

100

mA

Power Dissipation

150

mW

Junction Temperature

-55~+150

°C

Storage Temperature

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

50

V

Collector-Emitter Breakdown Voltage (Note 1)

50

V

Collector-Base Cutoff Current

100

nA

Collector-Emitter Cutoff Current

500

nA

Emitter-Base Cutoff Current

0.5

mA

ON CHARACTERISTICS

(Note 2)

DC Current Gain

35

60

Output Voltage (on)

0.2

V

ON CHARACTERISTICS

(Note 2)

Input Resistor

7.0

10

13

kΩ

Resistor Ratio

0.8

1.0

1.2

kΩ

Notes: 1. Pulse Test: Pulse Width<300µs, Duty Cycle<2.0%

2. Pulse Test: Pulse Width<300ms, Duty Cycle<2.0%