数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

UT4812-S08-R 数据表(PDF) 3 Page - Unisonic Technologies

部件名 UT4812-S08-R
功能描述  DUAL N-CHANNEL ENHANCEMENT MODE
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT4812-S08-R 数据表(HTML) 3 Page - Unisonic Technologies

  UT4812-S08-R Datasheet HTML 1Page - Unisonic Technologies UT4812-S08-R Datasheet HTML 2Page - Unisonic Technologies UT4812-S08-R Datasheet HTML 3Page - Unisonic Technologies UT4812-S08-R Datasheet HTML 4Page - Unisonic Technologies UT4812-S08-R Datasheet HTML 5Page - Unisonic Technologies UT4812-S08-R Datasheet HTML 6Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 3 / 6 page
background image
UT4812
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-166.B
ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note3)
ID
6.9
Pulsed Drain Current (Note1)
IDM
30
A
Power Dissipation
PD
2
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
74
110
℃
/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =250µA
30
V
Drain-Source Leakage Current
IDSS
VDS =30V, VGS =0 V
1
µA
Gate-Source Leakage Current
IGSS
VDS =0 V, VGS = ±20V
100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =250 µA
1
1.9
3
V
VGS =10V, ID =6.9A
22.5
28
mΩ
Drain-Source On-State Resistance (Note2)
RDS(ON)
VGS =4.5V, ID =5.0A
34.5
42
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
680
820
Output Capacitance
COSS
102
Reverse Transfer Capacitance
CRSS
VDS =15 V, VGS =0V, f=1MHz
77
108
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
4.6
7
Turn-ON Rise Time
tR
4.1
6.2
Turn-OFF Delay Time
tD(OFF)
20.6
30
Turn-OFF Fall-Time
tF
VGS=10V, VDS=15V, RL=2.2Ω,
RGEN =3Ω
5.2
7.5
ns
Total Gate Charge
QG
13.84
17
Gate Source Charge
QGS
1.82
Gate Drain Charge
QGD
VDS =15V, VGS =10V, ID =6.9A
3.2
nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward
Voltage(Note2)
VSD
IS=1A
0.76
1
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
3
A
Body Diode Reverse Recovery Time
tRR
IF=6.9 A, dI/dt=100A/μs
16.5
20
ns
Body Diode Reverse Recovery Charge
QRR
IF=6.9 A, dI/dt=100A/μs
7.8
10
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface Mounted on 1in
2 pad area, t≤10sec.



Html Pages

1 2 3 4 5 6


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com