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UTD410G-AA3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UTD410G-AA3-R
功能描述  N-CHANNEL ENHANCEMENT MODE
PDF  5 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UTD410G-AA3-R 数据表(HTML) 2 Page - Unisonic Technologies

  UTD410G-AA3-R Datasheet HTML 1Page - Unisonic Technologies UTD410G-AA3-R Datasheet HTML 2Page - Unisonic Technologies UTD410G-AA3-R Datasheet HTML 3Page - Unisonic Technologies UTD410G-AA3-R Datasheet HTML 4Page - Unisonic Technologies UTD410G-AA3-R Datasheet HTML 5Page - Unisonic Technologies  
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UTD410
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-142.B
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
Continuous Drain Current
ID
8
A
Pulsed Drain Current (Note1)
IDM
20
Repetitive Avalanche Energy (L=0.1mH Note1)
EAR
10
mJ
Power Dissipation (TC=25°C)
TO-252
PD
2
W
SOT-223
2.3
Junction Temperature
TJ
+175
°C
Storage Temperature
TSTG
-55 ~ +175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient (TC=25°C)
TO-252
θJA
46
60
°C/W
SOT-223
55
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =250µA
30
V
Drain-Source Leakage Current
IDSS
VDS =24V,VGS =0V
1
µA
Gate-Source Leakage Current
IGSS
VDS =0 V, VGS = ±20V
±100
nA
ON CHARACTERISTICS
Gate-Threshold Voltage
VGS(TH)
VDS =VGS, ID =250µA
1
1.8
3
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID =8A
48
65
mΩ
VGS=4.5V, ID =2A
75
105
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS =15 V, VGS =0V, f=1MHz
288
pF
Output Capacitance
COSS
57
pF
Reverse Transfer Capacitance
CRSS
39
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VGS=10V,VDD=15V, RL=1.8Ω,
RG=3Ω
3.7
ns
Turn-On Rise Time
tR
3.7
ns
Turn-Off Delay Time
tD(OFF)
15.6
ns
Turn-Off Fall-Time
tF
2.6
ns
Total Gate Charge
QG
VGS=10V, VDS=15V, ID=8A
6.72
nC
Gate-Source Charge
QGS
0.76
nC
Gate-Drain Charge
QGD
1.78
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS=1A
0.75
1
V
Maximum Continuous Drain-Source
Diode Forward Current
IS
4.3
A
Reverse Recovery Time
tRR
IF=8A, dIF/dt=100A/μs
12.6
ns
Reverse Recovery Charge
QRR
5.1
nC
Note: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 1 in
2 copper pad of FR4 board



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